Examples are disclosed herein relating to time-of-flight camera systems. One example provides a time-of-flight camera, comprising a global shutter image sensor comprising a plurality of pixels, each pixel of the plurality of pixels comprising a drain gate, and two or more taps, each tap comprising a storage diode configured to receive charge during an integration period, a floating diffusion capacitor configured to receive charge overflow from the storage diode during the integration period, and a dual conversion gate capacitor configured to receive charge overflow from the floating diffusion capacitor during the integration period.

A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Provided are methods for optical metrologies in repeatable qualitative analyses of flare and ghost artifacts in camera optical systems, which can include receiving a first image of a light array captured by a camera, analyzing, using at least one data processor, the first image to detect a first light artifact, receiving a second image of the light array, captured by a camera, in which a first light source in the light array is turned off, and in response to determining that the first light artifact is absent from the second image, determining, using the at least one data processor and based on a position and/or an intensity of the first light source, a first adjustment for the camera. Systems and computer program products are also provided.

Provided are methods for optical metrologies in repeatable qualitative analyses of flare and ghost artifacts in camera optical systems, which can include receiving a first image of a light array captured by a camera, analyzing, using at least one data processor, the first image to detect a first light artifact, receiving a second image of the light array, captured by a camera, in which a first light source in the light array is turned off, and in response to determining that the first light artifact is absent from the second image, determining, using the at least one data processor and based on a position and/or an intensity of the first light source, a first adjustment for the camera. Systems and computer program products are also provided.

A method for image acquisition may be provided. The method may include sending an exposure instruction to a plurality of image sensors. The method may further include controlling exposure time periods of at least one exposure group to obtain a plurality of frame images based on the exposure instruction. For each of the at least one exposure group, the exposure group may include a plurality of exposure regions corresponding to the plurality of image sensors, imaging positions corresponding to the plurality of exposure regions may be the same, and the exposure instruction may cause that a relationship between midpoints of exposure time periods of the plurality of exposure regions in the exposure group satisfies a condition.

A method for image acquisition may be provided. The method may include sending an exposure instruction to a plurality of image sensors. The method may further include controlling exposure time periods of at least one exposure group to obtain a plurality of frame images based on the exposure instruction. For each of the at least one exposure group, the exposure group may include a plurality of exposure regions corresponding to the plurality of image sensors, imaging positions corresponding to the plurality of exposure regions may be the same, and the exposure instruction may cause that a relationship between midpoints of exposure time periods of the plurality of exposure regions in the exposure group satisfies a condition.

An image sensor includes a pixel including a photoelectric conversion device configured to convert sensed light into charges and a floating diffusion node configured to store charges provided from the photoelectric conversion device, a timing generator configured to generate a reset signal including, prior to a light-sensing period, a first reset signal pulse for enabling an erasing of charges stored in at least one of the photoelectric conversion device and the floating diffusion node, and generate a transfer signal including, subsequent to the light-sensing period, at least two transfer signal pulses, each transfer signal pulse enabling a moving of charges stored in the photoelectric conversion device to the floating diffusion node, and a readout circuit configured to generate output data by summing results of performing at least two samplings for the floating diffusion node based on the at least two transfer signal pulses.

A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode pis disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.