A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode pis disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

The present technology relates to an information processing apparatus and an information processing system that enable accurate detection of a droplet from a dispenser.

The information processing apparatus includes: an event sensor including a pixel configured to photoelectrically convert an optical signal and output a pixel signal, the event sensor being configured to output a temporal luminance change of the optical signal as an event signal on the basis of the pixel signal; and a processor configured to detect a droplet injected from the dispenser on the basis of the event signal. The present technology can be applied to, for example, a dispenser control system that controls a dispenser, and the like.

The present technology relates to an information processing apparatus and an information processing system that enable accurate detection of a droplet from a dispenser.

The information processing apparatus includes: an event sensor including a pixel configured to photoelectrically convert an optical signal and output a pixel signal, the event sensor being configured to output a temporal luminance change of the optical signal as an event signal on the basis of the pixel signal; and a processor configured to detect a droplet injected from the dispenser on the basis of the event signal. The present technology can be applied to, for example, a dispenser control system that controls a dispenser, and the like.

A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to the floating diffusion node.

Some image sensors include pixels with capacitors. The capacitor may be used to store charge in the imaging pixel before readout. The capacitor may be a metal-insulator-metal (MIM) capacitor that is susceptible to dielectric relaxation. Dielectric relaxation may cause lag in the signal on the capacitor that impacts the signal on the capacitor during sampling. The image sensor may include dielectric relaxation correction circuitry that leverages the linear relationship between voltage stress and lag signal to correct for dielectric relaxation. The image sensor may include shielded pixels that operate with a similar timing scheme as the imaging pixels in the active array. Measured lag signals from the shielded pixels may be used to correct imaging data.

An organic photoelectric film on a substrate may perform photoelectric conversion of incident light. Pixel electrodes are arranged in a matrix form in an X-axis direction and a Y-axis direction between the substrate and the organic photoelectric film. A driving circuit may read pixel information from each pixel electrode of a pixel electrode line including a plurality of pixel electrodes arranged in the X-axis direction, and applies an on-voltage or an off-voltage to each pixel electrode 40 of the pixel electrode line. The driving circuit may scan a photoelectric conversion ON region to which the on-voltage is applied in the −Y-axis direction in synchronization with a timing of scanning a read line to which the pixel information is read in the −Y-axis direction.

An image sensor includes a pixel including a photoelectric conversion device configured to convert sensed light into charges and a floating diffusion node configured to store charges provided from the photoelectric conversion device, a timing generator configured to generate a reset signal including, prior to a light-sensing period, a first reset signal pulse for enabling an erasing of charges stored in at least one of the photoelectric conversion device and the floating diffusion node, and generate a transfer signal including, subsequent to the light-sensing period, at least two transfer signal pulses, each transfer signal pulse enabling a moving of charges stored in the photoelectric conversion device to the floating diffusion node, and a readout circuit configured to generate output data by summing results of performing at least two samplings for the floating diffusion node based on the at least two transfer signal pulses.

An array sensor and a method for forming and operating the same are provided. The array sensor includes: a sensor circuit including an array of pixel units that includes N rows of pixel units; and a driving circuit including at least N rows of shifting units; where the driving circuit further includes: a first global clearing signal line connected with odd rows of shifting units, a signal of which being applied to trigger the odd rows of shifting units to simultaneously turn on odd rows of pixel units, so that the odd rows of pixel units simultaneously discharge residual charge; and a second global clearing signal line connected with even rows of shifting units, a signal of which being applied to trigger the even rows of shifting units to simultaneously turn on even rows of pixel units, so that the even rows of pixel units simultaneously discharge residual charge.

A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.