A method for providing authentication using an image sensor of an electronic device including: receiving, by the electronic device, a plurality of frames from the image sensor of the electronic device, wherein each frame includes a plurality of Optical Black (OB) pixels; determining, by the electronic device, a set of optimal OB pixels from the plurality of frames; and generating, by the electronic device, a unique key based on the set of optimal OB pixels for the authentication.

An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.

An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.

An image sensor includes a pixel array, a row driver, a detector, an analog-to-digital converter and a controller. The pixel array includes a pixel area including a pixel and a dummy area including a monitoring circuit. The dummy area is disposed on a same substrate as the pixel area. The dummy area is disposed adjacent to the pixel area. The row driver is configured to output a driving signal to the pixel and the monitoring circuit. The detector is configured to receive a monitoring signal from the monitoring circuit. The analog-to-digital converter is configured to receive an analog signal corresponding to an incident light from the pixel and to convert the analog signal to a digital signal. The controller is configured to control the row driver and the analog-to-digital converter.

Provided is a photoelectric conversion device including a pixel array including a first pixel and a second pixel. The first pixel includes a photoelectric conversion unit including a first semiconductor region of a first conductivity type as a charge accumulation layer and photoelectrically converts incident light to generate a signal in accordance with the incident light, and the second pixel includes a second semiconductor region of the first conductivity type and a transistor including a first main electrode formed by a third semiconductor region connected to the second semiconductor region and a gate.

An image sensor system has a pixel array with a plurality of pixels, each of the pixels comprising a photodiode, a pixel buffer and a transfer gate coupled between the photodiode and an input of the pixel buffer. A voltage supply block is configured to generate a pixel supply voltage from an input voltage based on a first reference voltage and to provide the pixel supply voltage to the pixel array. A calibration processing block is configured to determine an average pixel signal based on an average of individual pixel signals at outputs of the pixels of the pixel array and to determine a correction value based on the average pixel signal and a reference pixel signal. A correction processing block is configured to determine the first reference voltage based on a combination of a second reference voltage and the correction value.

An image sensor includes a pixel array including a plurality of pixels each including a photosensitive element, and a readout circuit, wherein the pixels are arranged in at least two columns, within each column at least some of the pixels of the column are connected with a common column bus, respectively, for each column the readout circuit includes a first analog-to-digital converter (ADC) and a second ADC, for each column the first ADC is connected with the column bus, and for each column the second ADC is connectable with at least one of the column bus and a reference potential or the second ADC is connected with one optically shielded pixel of the pixel array.

An image sensor may a plurality of pixels, one or more analog-to-digital conversion (ADC) circuits, and at least one quantization circuit. The pixels may generate analog signals based on photoelectrons accumulated by the pixels when exposed to light. The ADC circuits may convert the analog signals to digital signals, wherein the digital signals may include (a) a first set of digital signals individually having a value corresponding to an integer number of discrete photoelectrons and (b) a second set of digital signals individually having a value between values of the first set of digital signals so as to correspond to a non-integer number of discrete photoelectron. The quantization circuit may convert the second set of digital signals to a third set of digital signals, wherein the third set of digital signals individually has a value corresponding to an integer number of discrete photoelectrons.

An image sensor may a plurality of pixels, one or more analog-to-digital conversion (ADC) circuits, and at least one quantization circuit. The pixels may generate analog signals based on photoelectrons accumulated by the pixels when exposed to light. The ADC circuits may convert the analog signals to digital signals, wherein the digital signals may include (a) a first set of digital signals individually having a value corresponding to an integer number of discrete photoelectrons and (b) a second set of digital signals individually having a value between values of the first set of digital signals so as to correspond to a non-integer number of discrete photoelectron. The quantization circuit may convert the second set of digital signals to a third set of digital signals, wherein the third set of digital signals individually has a value corresponding to an integer number of discrete photoelectrons.

There is no possibility of causing a useless event.

An imaging device includes: a photoelectric conversion unit including a plurality of photoelectric conversion elements that performs photoelectric conversion to generate an electrical signal; a setting unit that sets a threshold value according to a noise level of a predetermined area of the plurality of photoelectric conversion elements; and a first detection unit that detects a detection signal in a case where a change amount of the electrical signal generated by the plurality of photoelectric conversion elements exceeds the threshold value.