The photoelectric conversion device includes a plurality of pixels, a plurality of signal lines, a pixel control unit that controls readout of signals from the pixels, a column circuit unit that generates pixel data from the signals read out from the pixels, and a signal processing unit configured to perform digital signal processing on the pixel data. The signal lines include first and second signal lines on the same column, and a period of reading out a signal from the first signal line and a period of reading out a signal from the second signal line overlap each other, and the signal processing unit includes a difference acquisition unit that acquires a difference value between a pixel data read out to the first signal line and a pixel data read out to the second signal line, and a correction unit that corrects the pixel data based on the difference value.

A characteristic of a flicker component is detected to perform object detection at a higher speed and with higher accuracy. An object detection device according to an embodiment is provided with a solid-state imaging device (200) provided with a plurality of pixels arranged in a matrix, the solid-state imaging device that detects, according to a light amount incident on each of the pixels, occurrence of an event in the pixel, a flicker detection unit (12) that generates flicker information on the basis of the occurrence of the event detected by the solid-state imaging device, and an object detection unit (15) that detects an object on the basis of the flicker information detected by the solid-state imaging device.

A solid-state imaging element includes a pixel and an image processing unit. The pixel has a common transistor, a charge accumulation unit, and a power supply. The common transistor has a first terminal and a second terminal. The common transistor maintains a voltage of the first terminal at a predetermined voltage with a voltage applied from the power supply and outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the second terminal, based on a condition that an element voltage is a ground voltage. The common transistor outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the first terminal, based on the element voltage is higher than the ground voltage. The image processing unit generates a luminance image according to a change in the voltage output from the second terminal of the common transistor.

A solid-state imaging element includes a pixel and an image processing unit. The pixel has a common transistor, a charge accumulation unit, and a power supply. The common transistor has a first terminal and a second terminal. The common transistor maintains a voltage of the first terminal at a predetermined voltage with a voltage applied from the power supply and outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the second terminal, based on a condition that an element voltage is a ground voltage. The common transistor outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the first terminal, based on the element voltage is higher than the ground voltage. The image processing unit generates a luminance image according to a change in the voltage output from the second terminal of the common transistor.

A photoelectric conversion apparatus and the like that enables a predetermined determination in response to the incidence of photons is provided. The photoelectric conversion apparatus comprising a pixel provided with a photoelectric conversion unit that outputs a signal in response to the incidence of a photon; and a plurality of processing units configured to correspond to the pixel, wherein the processing unit has a first counter circuit configured to count an output signal from the pixel during a predetermined time period and a first memory configured to store a count value counted by the first counter circuit as a second count value, and wherein the processing unit outputs a determination result obtained by comparing a first count value output by the first counter circuit and a predetermined threshold that has been set based on the second count value read out from the first memory.

An image sensor, including a photosensitive pixel array, a storage element, and a displacement processing element, is provided. The photosensitive pixel array includes a photosensitive pixel. The storage element is configured to store a first sensing result of the photosensitive pixel at a first time point. The displacement processing element is coupled to the storage element to receive the first sensing result. The displacement processing element is configured to generate displacement information, wherein an image frame with the displacement information is transmitted to the outside of the image sensor.

A radiation imaging apparatus comprising pixels, a driver controlling the pixels via driving lines, a readout circuit reading out, via column signal lines, signals from the pixels and a detector detecting irradiation information of radiation separately from a radiation image, is provided. Each of the column signal lines is connected to pixels arranged on two pixel columns. The pixels include a first pixel and a second pixel, whose sensitivities are different from each other. The first and second pixels are connected to a common column signal line and are connected to driving lines different from each other. When detecting the irradiation information, the driver drives the first and second pixels at timings different from each other, and the detection circuit detects the irradiation information based on signals output from the first and second pixels.

Various implementations disclosed herein include devices, systems, and methods implemented by an electronic device with an imaging sensor including a plurality of pixels (e.g., a matrix of pixels) that each are capable of detecting illumination intensity or contrast change using at least one shared photosensor. In some implementations, the imaging sensor is capable of operating in a first illumination intensity detecting mode (e.g., in a frame-based camera mode) or in a second contrast change detecting mode (e.g., in an event camera mode). In some implementations, the first illumination intensity detecting mode and the second contrast change detecting mode are mutually exclusive. In some implementations, pixels at an imaging sensor include two transfer transistors (e.g., gates) where a first transfer transistor allows intensity detection, and a second transfer transistor allows contrast change detection.

An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.

Suppressing a dead period at the time of mode switching. A solid-state imaging device includes: a plurality of pixels (300) that each outputs a luminance change of incident light; and a detection circuit (305) that outputs an event signal based on the luminance change output from each of the pixels, in which each of the pixels includes: a photoelectric conversion element (311) that generates a charge according to an incident light amount; a logarithmic conversion circuit (312, 313) that is connected to the photoelectric conversion element and converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; and a first transistor (318) having a drain connected to a sense node of the logarithmic conversion circuit.