An image sensing device includes a pixel array including a plurality of pixels arranged in rows and columns, and suitable for outputting a plurality of pixel signals, and a plurality of readout circuits coupled to the pixel array, and suitable for compensating for readout deviations among the plurality of pixel signals when reading out the plurality of pixel signals.

An image sensing device includes a pixel array including a plurality of pixels arranged in rows and columns, and suitable for outputting a plurality of pixel signals, and a plurality of readout circuits coupled to the pixel array, and suitable for compensating for readout deviations among the plurality of pixel signals when reading out the plurality of pixel signals.

An image sensor includes a charge accumulation region having a first conductivity type and disposed in a substrate, a charge storage region having the first conductivity type and disposed in the substrate to be laterally spaced apart from the charge accumulation region, a transfer gate electrode disposed on a channel region between the charge accumulation region and the charge storage region to transfer a charge from the charge accumulation region to the charge storage region, a first well region having a second conductivity type and disposed below the charge storage region to inhibit a charge generated below the charge storage region from being moved to the charge storage region, and a second well region having the second conductivity type and disposed below a portion of one side of the first well region adjacent to a neighboring image cell.

An image sensor includes a charge accumulation region having a first conductivity type and disposed in a substrate, a charge storage region having the first conductivity type and disposed in the substrate to be laterally spaced apart from the charge accumulation region, a transfer gate electrode disposed on a channel region between the charge accumulation region and the charge storage region to transfer a charge from the charge accumulation region to the charge storage region, a first well region having a second conductivity type and disposed below the charge storage region to inhibit a charge generated below the charge storage region from being moved to the charge storage region, and a second well region having the second conductivity type and disposed below a portion of one side of the first well region adjacent to a neighboring image cell.

An image sensor, comprising a pixel region in which a plurality of pixel units are arranged, each pixel unit having first and second photoelectric conversion portions, a first output portion that outputs, outside of the image sensor, a first signal based on a signal from the first photoelectric conversion portion of the pixel units, and a second output portion that outputs a second signal based on a signal from the first photoelectric conversion portion and a signal from the second photoelectric conversion portion of the pixel units, wherein output of the first signal from the first output portion and output of the second signal from the second output portion are performed in parallel.

The disclosure provides multimode configurable spectrometers, a method of operating a multimode configurable spectrometer, and an optical monitoring system. In one embodiment the multimode configurable spectrometer includes: (1) an optical sensor configured to receive an optical input and convert the optical input to electrical signals, wherein the optical sensor includes multiple active pixel regions for converting the optical input to the electrical signals, (2) conversion circuitry, having multiple selectable converting circuits, that is configured to receive and convert the electrical signals to a digital output according to a selected one of the selectable converting circuits, and (3) a sensor controller configured to set a synchronized operating mode to direct operation of the optical sensor and select, based on the synchronized operating mode, at least one of the selectable converting circuits to provide the digital output.

An electronic device that includes a vision system carried by a bracket assembly is disclosed. The vision system may include a first camera module that captures an image of an object, a light emitting element that emits light rays toward the object, and a second camera module that receives light rays reflected from the object. The light rays may include infrared light rays. The bracket assembly is designed not only carry the aforementioned modules, but to also maintain a predetermined and fixed separation between the modules. The bracket assembly may form a rigid, multi-piece bracket assembly to prevent bending, thereby maintaining the predetermined separation. The electronic device may include a transparent cover designed to couple with a housing. The transparent cover incudes an alignment module designed to engage a module and provide a moving force that aligns the bracket assembly and the modules to a desired location in the housing.

An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Multi-stage auto-zeroing signal amplifiers are deployed within event-shuttering pixels of a quanta image sensor (QIS) pixel array to enable reliable per-pixel reporting of photonic events, down to resolution of a single photon strike, for each of a continuous sequence of sub-microsecond event-detection intervals.

Multi-stage auto-zeroing signal amplifiers are deployed within event-shuttering pixels of a quanta image sensor (QIS) pixel array to enable reliable per-pixel reporting of photonic events, down to resolution of a single photon strike, for each of a continuous sequence of sub-microsecond event-detection intervals.