An imaging device includes an image sensing device, a private key generation unit, and an image encryption unit. The image sensing device includes an image generator configured to generate image data acquired by capturing as image, and a physical unclonable function (PUF) generator configured to generate physical unclonable function (PUF) data including information about at least one fixed pattern noise (FPN) data value and at least one random telegraph noise (RTN) data value. The private key (KEY) generation unit generates a private key based on the at least one FPN data value and the at least one RTN data value that are acquired from the PUF data. The image encryption unit encrypts the image data using the private key. A first transistor included in the PUF generator exhibits different properties from a second transistor that is included in the image generator and corresponds to the first transistor.

An image sensor includes a first layer including a pixel array region having a plurality of pixels arranged in a plurality of row lines and a plurality of column lines; and a second layer including a row driver selecting at least a portion of the plurality of row lines, generating pixel control signals driving selected row lines, and outputting the pixel control signals to control signal lines, wherein the selected row lines share the control signal lines, at a branch point of the first layer, the selected row lines receive the pixel control signals from the control signal lines in common, and the pixel control signals simultaneously drive the selected row lines.

An image sensor having rows and columns of image pixels may include row control circuitry that controls voltages that are sent to each row of the image pixels. The row control circuitry may include booster circuitry that converts a positive power supply voltage (such as 2.8V) to voltages that are negative or otherwise less than the positive power supply voltage and/or greater than the positive power supply voltage. The booster circuitry may have a plurality of switches that control an input to an amplifier, thereby allowing the circuitry to produce any desired voltage in a given range. The booster circuitry output may be shared between multiple rows of the image pixels, and the produced boosted circuitry may be fed to any desired one or more of the rows of image pixels.

An image sensor having rows and columns of image pixels may include row control circuitry that controls voltages that are sent to each row of the image pixels. The row control circuitry may include booster circuitry that converts a positive power supply voltage (such as 2.8V) to voltages that are negative or otherwise less than the positive power supply voltage and/or greater than the positive power supply voltage. The booster circuitry may have a plurality of switches that control an input to an amplifier, thereby allowing the circuitry to produce any desired voltage in a given range. The booster circuitry output may be shared between multiple rows of the image pixels, and the produced boosted circuitry may be fed to any desired one or more of the rows of image pixels.

Row-by-row pixel read-out is executed concurrently within respective clusters of pixels of a pixel array, alternating the between descending and ascending progressions in the intra-cluster row readout sequence to reduce temporal skew between neighboring pixel rows in adjacent clusters.

An imaging device includes a first chip on which a plurality of first blocks is arranged in a matrix, and a second chip which includes a first block scanning circuit and a second block scanning circuit. The second chip includes a selection circuit configured to select driving timing given to a plurality of pixels, based on a signal output from the first block scanning circuit and a signal output from the second block scanning circuit. A second block includes a circuit other than the selection circuit.

Sensing pixels each store a sensing voltage level. A method for driving the plurality of sensing pixels includes providing a plurality of readout scan signals to the plurality of sensing pixels, and providing a plurality of reset scan signals to the plurality of sensing pixels. One of the plurality of readout scan signals enables one of the plurality of sensing pixels to output the sensing voltage level stored in the one of the plurality of sensing pixels. One of plurality of reset scan signals resets the sensing voltage level stored in one of the plurality of sensing pixels. One of the plurality of reset scan signals is generated by converting one of the plurality of readout scan signals with a level shift circuit or one of the plurality of readout scan signals is generated by converting one of the plurality of reset scan signals with a level shift circuit.

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels.

A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

Sensing pixels each store a sensing voltage level. A method for driving the plurality of sensing pixels includes providing a plurality of readout scan signals to the plurality of sensing pixels, and providing a plurality of reset scan signals to the plurality of sensing pixels. One of the plurality of readout scan signals enables one of the plurality of sensing pixels to output the sensing voltage level stored in the one of the plurality of sensing pixels. One of plurality of reset scan signals resets the sensing voltage level stored in one of the plurality of sensing pixels. An n.sup.th reset scan signal of the plurality of reset scan signals is started behind an n.sup.th readout scan signal of the plurality of readout scan signals in time domain.

The present disclosure relates to a solid-state imaging element and an electronic apparatus that can achieve a higher image quality. The imaging element includes a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing, a pixel array region in which a plurality of the pixels is placed in an array, a global drive circuit configured to supply a drive signal to the global drive portion, and a rolling drive circuit configured to supply a drive signal to the rolling drive portion. Further, the global drive circuit is placed on each of at least three or more sides of four sides surrounding the pixel array region. The present technology is applicable to a stacked CMOS image sensor, for example.