H04N25/745

Endoscope system
09749564 · 2017-08-29 · ·

An endoscope system includes an image pickup section provided with an image sensor and configured to obtain an examination image; a cable that transmits the examination image; and a processor that receives the examination image, performs image processing, and displays the processed image. The processor includes: a cable driver that applies a voltage higher than an input voltage standard of the image pickup section so as to compensate for attenuation of a high-frequency signal caused by the cable and outputs a clock signal for driving the image pickup section; a peaking circuit that performs waveform correction of the clock signal; and a DC level limiting circuit configured to limit, when a clock signal inputted from the first peaking circuit is switched to a DC voltage, an amplitude level of the DC voltage so as not to exceed a level of the input voltage standard of the image pickup section.

ELECTRONIC CIRCUIT, SOLID STATE IMAGE CAPTURING APPARATUS AND METHOD OF CONTROLLING ELECTRONIC CIRCUIT
20170244397 · 2017-08-24 ·

There is provided an electronic circuit including a timing signal generation unit for generating a timing signal; a data signal supply unit for synchronizing with the timing signal generated to supply a data signal; a data signal transmission circuit for transmitting the data signal supplied; a timing signal transmission circuit for transmitting the timing signal generated by a circuit having a substantially same delay time as the data signal transmission circuit; and a data holding unit for synchronizing with the timing signal transmitted to hold and output the data signal transmitted. Also, there are provided a solid state image capturing apparatus and a method of controlling the electronic circuit.

Photosensitive imaging devices and associated methods
09741761 · 2017-08-22 · ·

A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

Imaging device
09743028 · 2017-08-22 · ·

An imaging device has a sensor chip and a signal processing chip. The sensor chip includes a pixel array in which a plurality of pixels are arranged in a 2-dimensional matrix and a data output terminal group made up of a plurality of data output terminals which output analog signals of pixels for each pixel column of the pixel array. The signal processing chip includes a data input terminal group electrically coupled to the data output terminal group, a plurality of A/D converters which convert analog signals of pixels received by the data input terminal group into digital signals for each pixel column of the pixel array, and a control unit which controls operation of the plurality of A/D converters.

Driving method for image pickup apparatus, and image pickup apparatus

A pixel portion includes a plurality of first pixel rows and a plurality of second pixel rows each being arranged so as to be adjacent to the first pixel row. Among the first pixel row and the second pixel row arranged so as to be adjacent to each other, during at least a part of a period from an end of the electric charge accumulation period in the second pixel row until an end of an output period in which signals from pixels in the first pixel row are output, electric charges accumulated in photoelectric conversion units of pixels in the second pixel row are reset.

Image sensor with high dynamic range and method

In one form, a pixel for use in image sensing comprises a photodetector, a sink device, and a readout circuit. The photodetector is formed in a semiconductor substrate and has a charge collection region for receiving photocharge representative of incident light. The sink device is formed in the semiconductor substrate and adjacent to the charge collection region and has a gate overlying and insulated from the semiconductor substrate and receiving a responsivity control signal. The readout circuit transfers the photocharge collected by the charge collection region of the photodetector to an output in response to a select signal. In another form, the pixel may be used in an image sensor having a pixel array of such pixels.

Synchronized solid-state imaging element, imaging device, and electronic device
11431935 · 2022-08-30 · ·

There is provided a solid-state imaging element in which a first substrate in which a pixel circuit including a pixel array unit is formed and a second substrate in which a plurality of signal processing circuits are formed are laminated, and a common reference clock is supplied to the plurality of signal processing circuits that are formed on the second substrate.

RANGING METHOD AND RANGING DEVICE

A ranging method uses a light source and a range sensor. The range sensor includes a charge-generating area and first and second charge-accumulating areas. Charges generated in the charge-generating area are transferred to the first charge-accumulating area during a first period so as to be accumulated in the first charge-accumulating area and the second charge-accumulating area during a second period so as to be accumulated in the second charge-accumulating area. A distance d to an object OJ is arithmetized based on a quantity of charges accumulated in the first charge-accumulating area and a quantity of charges accumulated in the second charge-accumulating area. When pulse light is emitted from the light source, the pulse light whose light-intensity stable period within the emission period of the pulse light is set in advance to be longer than each of the first and second periods is emitted from the light source.

HDR PIXEL
20170237891 · 2017-08-17 · ·

The image sensor according to the invention is an image sensor with a matrix of pixels for generating a resulting image with a higher dynamic range from the acquisition of two original images, wherein the pixels of the image sensor are designed as demodulation pixels, wherein each comprises a conversion region for generating charge carriers from the received radiation, a separation device for temporally separating the generated charge carriers into two charge carrier streams, a memory device with two memories for separately storing the charge carriers of the two charge carrier streams, and a read-out device for converting the stored charge carriers into electrical signals, wherein the separation device is designed to carry out the separation of the charge carriers generated in one period into two different time periods.

TIME DETECTION CIRCUIT, AD CONVERSION CIRCUIT, AND SOLID-STATE IMAGING DEVICE
20170237928 · 2017-08-17 · ·

A latch unit that starts an operation of capturing a data signal according to a startup instruction signal and holds the data signal and ends the capturing operation at a timing at which an execution instruction signal is input, a first signal path that transfers a latch timing signal as the startup instruction signal, and a second signal path that transfers the latch timing signal as the execution instruction signal are included, and a first logic element that outputs a first output signal switched to a logical value according to a logical value of an input signal at a first predetermined timing, and a signal maintenance logic circuit that continues to output a second output signal with a predetermined logical value according to the logical value of the input signal until initialization of a reset signal is indicated are arranged in the second signal path.