A channel multiplexing method for reading array detector signals includes: dividing array detectors into M groups, at least two detectors being in each group; array coding the read channel to read M row signals and N column signals, which means when a signal is outputted at the detector in row a, column b, the signals of row a and column b are outputted correspondingly; connecting the readout signals of-the row and the column to different positions of two transmission lines respectively; determining the source row number and column number of the signal on the basis of the time difference between the time of signal reaching two ends of the transmission line, and marking the source detector from which the signal is generated on the basis of two time differences of the row signal and the column signal.

A semiconductor device includes a pixel array including a plurality of pixels arranged in a matrix, each pixel including a first switch and a second switch, a scanning circuit, in a first mode, enabling a first signal to be output from the pixel by setting the first and second switches to “off” in a period before a first timing, enabling a second signal to be output from the pixel by setting only the first switch to “on” for a predetermined period from the first timing, and enabling a third signal to be output from the pixel by setting the first and second switches to “on” for a predetermined period from a second timing after the first timing, and a first AD (Analog/Digital) converter, in a second mode, capable of performing AD conversion by comparing the difference between the second signal and the first signal with a reference signal.

Provided is an image processing apparatus for correcting blinking defect noise contained in image data generated by an image sensor. The image sensor includes a pixels arranged two-dimensionally and reading circuits configured to read a pixel value. The image processing apparatus includes: an information acquisition unit configured to acquire noise information that is defined by associating positional information of the reading circuits or positional information of each of the pixels with feature data related to the blinking defect noise caused by the reading circuits; an estimation unit configured to estimate a random noise amount in a pixel of interest based on the feature data and a random noise model for estimating the random noise amount in the pixel of interest; and a correction unit configured to correct a pixel value of the pixel of interest based on the random noise amount estimated by the estimation unit.

Provided is a radiation imaging apparatus, including: a plurality of pixels configured to output image signals corresponding to radiation; an image signal line configured to output the image signals; and a detection signal line configured to output a detection signal for detection of irradiation of the radiation, in which at least one of the plurality of pixels includes: a conversion element configured to convert the radiation into charge; a first switch configured to output the image signal corresponding to the charge via the image signal line; a storage capacitor including a first electrode and a second electrode, in which the first electrode is electrically connected to the conversion element to store the charge; and a second switch configured to electrically connect the second electrode and the detection signal line.

An image sensor comprises a pixel circuit including a reset transistor and configured to output a pixel signal; and a differential comparator including a pixel input, a reference input, and a comparator output, wherein one of a source or a drain of the reset transistor is connected to the comparator output. In this manner, an active reset method may be incorporated in the image sensor.

An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

The disclosure extends to methods, systems, and computer program products for producing an image in light deficient environments with luminance and chrominance emitted from a controlled light source.

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.