The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.

There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

There is provided an imaging element includes a photoelectric conversion unit that includes a first electrode, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode that has an opposite region opposite to the first electrode via an insulating layer, and a transfer control electrode that is opposite to the first electrode and the charge storage electrode via the insulating layer, and the photoelectric conversion layer is disposed above at least the charge storage electrode via the insulating layer.

A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.

A charge sensitive amplifier circuit for sensor frontend comprises an input node to be connected to a sensor to receive an input charge, and an output node to be connected to a charge conversion circuit. The charge sensitive amplifier circuit comprises a first transfer switch located between the input node and the output node to transfer the input charge to the output node. The charge sensitive amplifier circuit further comprises a second transfer switch located in parallel to the first transfer switch between the input node and the output node to transfer the input charge to the output node.

An imaging device according to an embodiment includes: a plurality of pixels (110) each including a photoelectric conversion element (20) and arranged in an array of matrix; a control line group (16) including a plurality of control lines for controlling each of pixels aligned in a row direction, each arranged in each of rows of the array; and a plurality of reading lines (VSL) arranged in each of columns for transferring a pixel signal read from each of pixels aligned in a column direction of the array, wherein the plurality of pixels includes: a first pixel (110GS) controlled by a control signal supplied from a first control line group including control lines in a first number among a plurality of control lines included in the control line group in each of pixels aligned in the row direction in at least one of rows of the array; and a second pixel (110RS) controlled by a control signal supplied from a second control line group including a control line in a second number smaller than the first number among a plurality of control lines included in the control line group.

An imaging device according to an embodiment of the present disclosure includes: a pixel array; and a sensitivity setting section. The pixel array includes a plurality of light-receiving pixels that is divided into a plurality of pixel lines. The plurality of pixel lines includes a first pixel line and a second pixel line that extend in a first direction and are provided side by side in a second direction. The plurality of light-receiving pixels each accumulates electric charge corresponding to an amount of received light and each has light-receiving sensitivity which is variable. The sensitivity setting section sets the light-receiving sensitivity of a second light-receiving pixel in a first period on the basis of a first pixel value corresponding to a result of accumulation in a first light-receiving pixel disposed at a first position in the first pixel line in the first direction. The second light-receiving pixel is disposed at the first position in the second pixel line in the first direction.

An image sensor comprises a plurality of pixels. Pixels are capable of detecting a change in an amount of light intensity and pixels are capable of detecting an amount of light intensity. In a first mode the sensor outputs data from the first one or more of the pixels. In a second mode the sensor outputs data from the second one or more of the pixels. The first mode may be a lower power operation mode and the second mode may be a higher power operation mode. At least one of the first mode and the second mode is selected by a processor based on at least one of a result of processing data output in the first mode and a result of processing data output in the second mode.

An image sensor comprises a plurality of pixels. Pixels are capable of detecting a change in an amount of light intensity and pixels are capable of detecting an amount of light intensity. In a first mode the sensor outputs data from the first one or more of the pixels. In a second mode the sensor outputs data from the second one or more of the pixels. At least one of the first mode and the second mode is selected by a processor based on at least one of a result of processing data output in the first mode and a result of processing data output in the second mode.

An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.