An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

There is provided a pixel circuit capable of outputting time difference data and image data, and including an image circuit and a difference circuit. The image circuit is used to record and output detected light energy of a first interval as the image data. The difference circuit is used to record and output a variation of detected light energy between the first interval and a second interval as the time difference data. The pixel circuit selects to output at least one of the time difference data and the image data.

There is provided a pixel circuit capable of outputting time difference data and image data, and including an image circuit and a difference circuit. The image circuit is used to record and output detected light energy of a first interval as the image data. The difference circuit is used to record and output a variation of detected light energy between the first interval and a second interval as the time difference data. The pixel circuit selects to output at least one of the time difference data and the image data.

An imaging device includes an image sensing device, a private key generation unit, and an image encryption unit. The image sensing device includes an image generator configured to generate image data acquired by capturing as image, and a physical unclonable function (PUF) generator configured to generate physical unclonable function (PUF) data including information about at least one fixed pattern noise (FPN) data value and at least one random telegraph noise (RTN) data value. The private key (KEY) generation unit generates a private key based on the at least one FPN data value and the at least one RTN data value that are acquired from the PUF data. The image encryption unit encrypts the image data using the private key. A first transistor included in the PUF generator exhibits different properties from a second transistor that is included in the image generator and corresponds to the first transistor.

An imaging device includes an image sensing device, a private key generation unit, and an image encryption unit. The image sensing device includes an image generator configured to generate image data acquired by capturing as image, and a physical unclonable function (PUF) generator configured to generate physical unclonable function (PUF) data including information about at least one fixed pattern noise (FPN) data value and at least one random telegraph noise (RTN) data value. The private key (KEY) generation unit generates a private key based on the at least one FPN data value and the at least one RTN data value that are acquired from the PUF data. The image encryption unit encrypts the image data using the private key. A first transistor included in the PUF generator exhibits different properties from a second transistor that is included in the image generator and corresponds to the first transistor.

An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.

An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.

An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.