A solid-state imaging apparatus includes: an imaging section that acquires image data; and a control section that changes time of reading out the image data in accordance with time of DNN processing on the image data.

A solid-state imaging device includes: pixels; a first sample-and-hold circuit provided per column and generating a first differential voltage that is a difference between a first reset voltage and a first signal voltage output from a first pixel disposed in a corresponding column among the pixels; a second sample-and-hold circuit provided per column and generating a second differential voltage that is a difference between a second reset voltage and a second signal voltage output from a second pixel disposed in the corresponding column among the pixels and different from the first pixel; and an A/D conversion circuit provided per column and converting, into digital signals, a first voltage based on the first differential voltage output from the first sample-and-hold circuit disposed in the corresponding column and a second voltage based on the second differential voltage output from the second sample-and-hold circuit disposed in the corresponding column.

A solid-state imaging device includes: pixels; a first sample-and-hold circuit provided per column and generating a first differential voltage that is a difference between a first reset voltage and a first signal voltage output from a first pixel disposed in a corresponding column among the pixels; a second sample-and-hold circuit provided per column and generating a second differential voltage that is a difference between a second reset voltage and a second signal voltage output from a second pixel disposed in the corresponding column among the pixels and different from the first pixel; and an A/D conversion circuit provided per column and converting, into digital signals, a first voltage based on the first differential voltage output from the first sample-and-hold circuit disposed in the corresponding column and a second voltage based on the second differential voltage output from the second sample-and-hold circuit disposed in the corresponding column.

An image sensor for electronic cameras has a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises at least one light-sensitive element; a readout node; a transfer gate; a converter transistor; and a selection switch that is connected to a signal output of the converter transistor to selectively couple the signal output to a column line of the image sensor. The column line is coupled or can be coupled to a negative input of an associated column amplifier via an input capacitor, wherein an amplifier output of the column amplifier is connected to a column readout circuit and to a compensation line. The compensation line is coupled via a respective feedback capacitor to the respective readout node of the associated pixels.

A solid-state imaging device comprising: a pixel array including pixels arranged in a plurality of rows and in a plurality of columns; a first column circuit group; a second column circuit group disposed in the same side with respect to the pixel array as that in which the first column circuit group is disposed; a first counter configured to supply a count signal to the first column circuit group; and a second counter configured to supply a count signal to the second column circuit group, wherein the first column circuit group and the second column circuit group are arranged to be separate from each other in a direction along the columns, wherein the first column circuit group and the second column circuit group are configured to process pixel signals for different colors.

An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.

“An image sensing device is provided in the present invention. A control circuit determines a voltage change rate of a sensing signal according to a voltage value of the sensing signal generated by a light sensing unit during an estimation period, and controls an input adjustment circuit during an exposure period according to the voltage change rate to provide an input adjustment signal to a negative input end of an operational amplifier, such that a signal value of an amplified signal falls within a pre-set range during the exposure period.”

“An image sensing device is provided in the present invention. A control circuit determines a voltage change rate of a sensing signal according to a voltage value of the sensing signal generated by a light sensing unit during an estimation period, and controls an input adjustment circuit during an exposure period according to the voltage change rate to provide an input adjustment signal to a negative input end of an operational amplifier, such that a signal value of an amplified signal falls within a pre-set range during the exposure period.”

To improve the frame rate in an imaging apparatus that carries out still image recording and moving image display simultaneously. A pixel array includes an arrangement of a plurality of pixels. The plurality of pixels each include an internal memory. An exposure control unit carries out first exposure control in which captured data obtained by performing exposure to all the plurality of pixels together is retained in the internal memories of the pixels. The exposure control unit also carries out second exposure control in which captured data obtained by performing exposure to specific pixels of the plurality of pixels together is retained in the internal memories of the pixels.