An image processing apparatus includes a correction factor calculating unit configured to calculate a correction factor for correcting a difference in pixel values corresponding to a difference between a spectral sensitivity and a preset reference spectral sensitivity in a predetermined wavelength range at a pixel of interest, based on image data generated by an image sensor, the image sensor having a plurality of pixels on which color filters of a plurality of colors with different spectral transmittances are respectively disposed, the color filters forming a predetermined array pattern, the correction factor calculating unit being configured to calculate the correction factor for each of the plurality of pixels on which at least a predetermined color filter of the color filters is disposed.

A substrate has a first surface and a second surface facing each other. A photoelectric conversion region includes a plurality of photoelectric conversion devices provided in the substrate. An interlayered insulating layer is provided on the first surface of the substrate. A plurality of wires is provided on the interlayered insulating layer. An inter-wire insulating layer covers the plurality of wires. A plurality of micro lenses is provided on the second surface of the substrate. A grid pattern is provided in at least one of the interlayered insulating layer and the inter-wire insulating layer. The grid pattern, when viewed in a plan view, overlaps a region between two adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices.

A substrate has a first surface and a second surface facing each other. A photoelectric conversion region includes a plurality of photoelectric conversion devices provided in the substrate. An interlayered insulating layer is provided on the first surface of the substrate. A plurality of wires is provided on the interlayered insulating layer. An inter-wire insulating layer covers the plurality of wires. A plurality of micro lenses is provided on the second surface of the substrate. A grid pattern is provided in at least one of the interlayered insulating layer and the inter-wire insulating layer. The grid pattern, when viewed in a plan view, overlaps a region between two adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices.

An imaging device includes: a pixel array including first and second pixels, each pixel including a photoelectric converter converting light into charge and a detection circuit detecting the charge; a first voltage supply circuit supplying a first voltage to the first pixel such that an electric potential of the first electrode is set to a first electric potential at a point of time at which a charge accumulation period for the first pixel starts; a second voltage supply circuit supplying a second voltage to the second pixel such that an electric potential of the first electrode of the second pixel is set to a second electric potential different from the first electric potential at a point of time at which a charge accumulation period for the second pixel starts; and an addition circuit adding together signals generated in the first and second pixels.

An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

An image sensor may include an array of pixels. Pixels in the array may include a photodiode that converts incident light into electrical charge and a charge storage region for storing the electrical charge before it is read out from the pixel. Pixels in the array may include a microlens formed over the photodiode that directs light onto the photodiode. Pixels in the array may include an additional array of microlenses between the microlens and the photodiode. The additional array of microlenses may direct light away from the charge storage region to prevent charge stored at the charge storage region from being affected by light that is not incident upon the photodiode. The image sensor may be a backside illuminated image sensor that operates in a global shutter mode.

The disclosure extends to methods, systems, and computer program products for widening dynamic range within an image in a light deficient environment.

An image capture device, pixel, and method of determining a focus setting for an image capture device are described. The image capture device includes an imaging area and a pixel readout circuit. The imaging area includes a plurality of pixels. The plurality of pixels includes multiple pixels in which each pixel of the multiple pixels includes a two-dimensional array of photodetectors and a microlens. Each photodetector in the array of photodetectors for a pixel is electrically isolated from each other photodetector in the array of photodetectors. A microlens is disposed over the array of photodetectors for the pixel. The pixel readout circuit includes, per pixel, a shared readout circuit associated with the array of photodetectors for the pixel and a set of charge transfer transistors. Each charge transfer transistor is operable to connect a photodetector in the array of photodetectors to the shared readout circuit.

An image sensor may include an array of pixels. Pixels in the array may include a photodiode that converts incident light into electrical charge and a charge storage region for storing the electrical charge before it is read out from the pixel. Pixels in the array may include a microlens formed over the photodiode that directs light onto the photodiode. Pixels in the array may include an additional array of microlenses between the microlens and the photodiode. The additional array of microlenses may direct light away from the charge storage region to prevent charge stored at the charge storage region from being affected by light that is not incident upon the photodiode. The image sensor may be a backside illuminated image sensor that operates in a global shutter mode.

An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.