Apparatus for heating a substrate within a substrate processing chamber are described herein. More specifically, possible lamp modules for use within a substrate processing chamber are described. The lamp modules include a reflector body. The reflector body is a reflective material. The reflector body includes grooves disposed in a surface and configured to direct radiant energy towards a substrate. Each ring includes multiple grooves with different cross sections to allow radiant energy to be directed at different radial positions on the substrate from the same ring. The grooves may be either curved or linear grooves.

An optical heating device includes a heating light source unit having a plurality of planar light source areas in each of which a light source is arranged, and a controller configured to control light output of the light source. The controller includes a storage section that stores temperature distribution characteristic information describing a relation between a relative ratio of the light output of each light source and temperature distribution on a main surface of a tabular test piece, when light from the heating light source unit is irradiated toward the tabular test piece; and an output controller that changes a ratio of the light output based on the temperature distribution characteristic information, in order to bring the temperature distribution of a main surface of an object to be heated obtained when the light is irradiated under a predetermined light output for distribution measurement closer to a desired temperature distribution.

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

An optical heating device includes: a chamber that accommodates a workpiece; a supporter that supports the workpiece in the chamber; a plurality of solid-state light sources emitting heating light toward a main surface of the workpiece; a plurality of reference light sources that emit reference light toward the main surface of the workpiece when power of the same power value is supplied to each of the reference light sources; a plurality of photodetectors that corresponds to the respective reference light sources, and that output signals in response to the intensity of the reference light that has been received; and a controller that executes a reference mode and a heating mode, the reference light sources and the corresponding photodetectors are arranged to face each other through the workpiece, and the photodetectors are configured to receive the reference light emitted from the reference light sources and transmitted through the workpiece.

A carrier containing a plurality of semiconductor wafers in a lot is transported into a heat treatment apparatus. Thereafter, a recipe specifying treatment procedures and treatment conditions is set for each of the semiconductor wafers. Next, a reflectance of each of the semiconductor wafers stored in the carrier is measured. Based on the set recipe and the measured reflectance of each semiconductor wafer, a predicted attainable temperature of each semiconductor wafer at the time of flash heating treatment is calculated, and the calculated predicted attainable temperature is displayed. This allows the setting of the treatment conditions with reference to the displayed predicted attainable temperature, to thereby easily achieve the setting of the heat treatment conditions.

A heating light source device includes a light source section having a plurality of light-emitting element areas that contain a plurality of light-emitting elements, each of the light-emitting element areas being separated from each other; a cooling unit disposed in contact with the light source section; a plurality of cooling channels formed inside the cooling unit and disposed independently each other; a first main channel connected with one end of each of the cooling channels; and a second main channel connected with the other end of each of the cooling channels, and each of the cooling channels is formed at an internal position of the cooling unit corresponding to the light-emitting element areas.

A heating light source device includes a plurality of heating light source modules; each of the heating light source modules includes; a light-emitting element substrate having a placement surface and a back side surface, the back side surface being opposite to the placement surface; a plurality of light-emitting elements mounted on the placement surface; and a cooling member being in contact with the back side surface and including a cooling channel formed inside the cooling member and that communicates cooling medium for cooling the light-emitting elements, an inlet port that introduces the cooling medium into the cooling channel, an outlet port that discharges the cooling medium to the outside of the cooling member; and the cooling channel has a spiral shape being gradually from a center portion side of the light-emitting element substrate to a circumferential edge portion side thereof when viewed from a direction orthogonal to the placement surface.

A window assembly for a thermal processing chamber applicable for thermal processing of a semiconductor substrate is provided. The window assembly includes an upper window, a lower window, and a plurality of linear reflectors disposed between the upper window and the lower window. The plurality of linear reflectors extend lengthwise parallel to each other and parallel to a plane of the window assembly. The window assembly includes a pressure control region defined between the upper window, the lower window, and side surfaces of each linear reflector.

A heat treatment susceptor holds a substrate when the substrate is irradiated with a flash of light from flash lamps to perform a heat treatment on the substrate. The heat treatment susceptor includes: a holding plate having a planar holding surface; and a plurality of substrate support bodies mounted upright on the holding surface, wherein a slit is formed around a position where at least one of the substrate support bodies is mounted upright in the holding plate, and the slit includes at least one bending portion or a corner portion.

Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.