Embodiments of the present invention generally relate to simplified, high voltage, tungsten halogen lamps for use as source of heat radiation in a rapid thermal processing (RTP) chamber or other lamp heated thermal processing chambers. Embodiments include a lamp design that includes an external fuse while reducing the number of part and expense of prior art lamps. In addition, embodiments of the lamps described herein provide sufficient rigidity to handle compressive forces of inserting the lamps into a heating assembly base, while maintaining a simplified fuse design.

A reaction apparatus contacts a process gas on a semiconductor wafer during a wafering process. The semiconductor wafer defines a center region. The reaction apparatus includes an upper dome, a lower dome, a shaft, and a cap. The lower dome is attached to the upper dome, and the upper dome and the lower dome define a reaction chamber. The cap is positioned on the shaft within the reaction chamber for reducing heat absorbed by the center region of the semiconductor wafer. The cap is attached to a first end of the shaft. The cap includes a tube and a disc. The tube defines a tube diameter larger than a shaft diameter of the shaft. The tube circumscribes the first end of the shaft. The disc is attached to the tube and is positioned to block radiant heat from heating the center region of the semiconductor wafer.

A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.

A heating device using an LED is provided. The heating device includes a heater for heating a target with LED light, an LED controller for controlling power supplied to the LED such that a temperature of the target is adjusted with the power being in the range where a current thereof does not exceed an allowable current Imax, a correction unit for correcting Imax, and a voltage measurement unit for measuring a voltage of the LED. The correction unit estimates a junction temperature Tjm of the LED when Imax is supplied based on a measurement result by the voltage measurement unit when an estimation current Ie is supplied after Imax is supplied to the LED for correction. When Tjm of the LED when Imax is supplied exceeds Tmax corresponding to Imax, the correction unit corrects Imax.

An apparatus for processing a substrate may include a processing module including at least one process chamber for processing a desired process on a substrate, an index module for transferring the substrate from an outside into the processing module, and a drying unit for removing a moisture or undesired gases from the at least one process chamber. The drying unit may remove the moisture or the undesired gases from components newly installed in the at least one process chamber.

The semiconductor wafer is preheated at a preheating temperature, and then irradiated with a flash of light from a flash lamp. The upper radiation thermometer measures a temperature of a front-surface of a semiconductor wafer which is raised by irradiation with a flash of light. When the front-surface temperature of the semiconductor wafer measured by the upper radiation thermometer reaches the target temperature, the supply of a current to the flash lamps is stopped to lower the front-surface temperature of the semiconductor wafer. Since the supply of a current to the flash lamps is stopped when the measured temperature of the front-surface of the semiconductor wafer reaches the target temperature, the front-surface temperature of the semiconductor wafer can be accurately raised to the target temperature regardless of the front-surface state and reflectance of the semiconductor wafer.

Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.

A substrate heating apparatus includes: a plurality of heating lamps disposed on a chuck stage; a window disposed on the chuck stage and including a window base and a central lens, wherein the chuck stage and the window are each configured to support a substrate above the heating lamps; and a mirror disposed between the heating lamps and the chuck stage, the mirror including a mirror base, a central reflector, and an edge reflector, wherein the plurality of heating lamps are configured to heat the substrate by emitting light through the window onto the substrate and emitting light onto the mirror, wherein the mirror is configured to reflect the light through the window onto the substrate, including reflecting portions of the light via the central and edge reflectors, and wherein the central lens is configured to focus the light onto the central portion of the substrate.

Embodiments disclosed herein relate to circular lamp arrays for use in a semiconductor processing chamber. Circular lamp arrays utilizing one or more torroidal lamps disposed in a reflective trough and arranged in a concentric circular pattern may provide for improved rapid thermal processing. The reflective troughs, which may house the torroidal lamps, may be disposed at various angles relative to a surface of a substrate being processed.

A heating treatment method includes:

a step (A) of supplying power to both a heating lamp and an LED, and irradiating a heating object with light emitted from the heating lamp and light emitted from the LED to raise the temperature of the heating object;

a step (B) of decreasing the power supplied to the heating lamp after performing the step (A); and

a step (C) of lowering the temperature of the heating object by decreasing the power supplied to the LED after performing the step (B).