A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

An optical heating device for heating a substrate includes: a chamber for accommodating the substrate; a support member for supporting the substrate in the chamber; a flash lamp disposed to face a first main surface of the substrate supported by the support member; a plurality of LED elements for emitting light from outside a flash light irradiation space that is sandwiched between the substrate supported by the support member and the flash lamp, the light traveling toward the first main surface of the substrate or a second main surface of the substrate that is the opposite side of the first main surface; and a light blocking member disposed between the flash lamp and a plurality of the LED elements in a separating direction, and outside the flash light irradiation space, for blocking the light emitted from the flash lamp and traveling toward a plurality of the LED elements.

A substrate processing system includes a processing chamber, a substrate support, a heat source, a gas delivery system and a controller. The substrate support is disposed in the processing chamber and supports a substrate. The heat source heats the substrate. The gas delivery system supplies a process gas to the processing chamber. The controller controls the gas delivery system and the heat source to iteratively perform an isotropic atomic layer etch process including: during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing; during the atomistic adsorption, exposing a surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto an exposed material of the substrate to form a modified material; and during the pulsed thermal annealing, pulsing the heat source multiple times within a predetermined period to expose and remove the modified material.

A flash lamp emits a flash of light to a front surface of a semiconductor wafer held in a chamber to heat the semiconductor wafer. A GCT thyristor is connected in parallel with the flash lamp. After a lapse of a predetermined time period since a current starts to flow through the flash lamp, the GCT thyristor enters an ON state. This allows a discharge current to flow through the GCT thyristor with a smaller impedance, and prevents any current from flowing through the flash lamp. Consequently, a tail current flowing through the flash lamp can be suppressed. Furthermore, reduction in a voltage charged into a capacitor can prevent the life of the flash lamp from being shortened.

A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.

A gas ring is attached to an upper portion of a chamber side portion as a side wall of a chamber. The gas ring is formed by overlapping an upper ring and a lower ring. A gap between the upper ring and the lower ring provides a flow path for processing gas. A labyrinthine resisting unit is formed in the flow path. The mass of the lower ring having an inner wall surface is increased to increase heat capacity. The lower ring is attached to the chamber side portion to be in surface contact with the chamber side portion, so that thermal conductivity from the lower ring to the chamber side portion has a large value, and the amount of heat accumulated in the lower ring is reduced. An increase in temperature of the lower ring at thermal processing is thereby suppressed to prevent discoloration of the gas ring.

Apparatus, systems, and methods for processing workpieces are provided. In one example, the system includes a processing chamber. The system includes a workpiece support configured to support a workpiece within the processing chamber. The system includes a heat source configured to emit light toward the workpiece. The system includes a shutter disposed between the workpiece and the heat source. The shutter includes an electrochromic material configurable in a translucent state and an opaque state. When the electrochromic material is configured in the opaque state, the shutter reduces transmission of the light through the shutter, and when the electrochromic material is configured in the translucent state, the light at least partially passes through the shutter. The system includes a controller configured to control the shutter to reduce transmission of light through the shutter during a thermal treatment process.

A method of manufacturing a semiconductor wafer in a reaction apparatus includes channeling a process gas into a reaction chamber of the reaction apparatus, heating the semiconductor wafer with a high intensity lamp positioned below the reaction chamber, blocking radiant heat from the high intensity lamp from heating a center region of the semiconductor wafer with a cap positioned on a shaft within the reaction chamber, the cap including a tube and a disc attached to the tube, where the disc generates a uniform temperature distribution on the semiconductor wafer, and depositing a layer on the semiconductor wafer with the process gas, where the uniform temperature distribution forms a uniform thickness of the layer on the semiconductor wafer.

A semiconductor device and a processing method therefor, and a method for measuring temperature are provided. The semiconductor device includes a chamber, including a bearing component configured to place a wafer; a heat supply assembly configured to supply a heat source to the chamber; an adjustment plate; and a temperature measuring assembly configured to receive heat radiation and output a temperature measured according to the received heat radiation. The adjustment plate has a first light transmittance when the wafer is placed on the bearing component, and the temperature measuring assembly receives the heat radiation that is emitted by the wafer and passes through the adjustment plate. The adjustment plate has a second light transmittance different from the second light transmittance when the wafer is not placed on the bearing component, and the temperature measuring assembly receives the heat radiation emitted by the adjustment plate.

Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.