Embodiments of apparatus for providing radiant energy in the form of electromagnetic radiation are provided herein. In some embodiments a radiation source for electromagnetic radiation includes a tubular body formed from a material transparent to electromagnetic radiation; a filament disposed within the tubular body; and a reflective coating disposed on a portion of the tubular body to form a reflective portion, wherein the reflective portion is configured to minimize reflection of electromagnetic radiation emanating from the filament during use back to the filament.

This temperature control device for controlling the temperature of an object that is subject to temperature control is provided with: a heating mechanism which has a heat source for heating said object subject to temperature control; a temperature measuring instrument for measuring the peripheral temperature of said object subject to temperature control; a temperature estimation unit for dynamically estimating the temperature of said object subject to temperature control on the basis of power inputted to the heat source, power supplied to said object subject to temperature control, and the peripheral temperature; and a temperature controller for performing control on the temperature of said object subject to temperature control by controlling the power inputted to the heat source on the basis of the estimated temperature of said object subject to temperature control.

A heating treatment method includes: a step (A) of supplying power to both a heating lamp and an LED, and irradiating a heating object with light emitted from the heating lamp and light emitted from the LED to raise the temperature of the heating object; a step (B) of decreasing the power supplied to the heating lamp after performing the step (A); and a step (C) of lowering the temperature of the heating object by decreasing the power supplied to the LED after performing the step (B).

A plurality of flash lamps are disposed on an upper side of a chamber housing a semiconductor wafer and a plurality of LED lamps are disposed on a lower side thereof. A surface of a semiconductor wafer preheated by light irradiation from a plurality of LED lamps is irradiated with a flash of light from a flash lamp. The LED lamps emit light having a wavelength of 900 nm or less. The light radiated from the LED lamps passes through a quartz lower chamber window, and then emitted to the semiconductor wafer. The light with the wavelength of 900 nm or less radiated from the LED lamps is also favorably absorbed by the semiconductor wafer in a low temperature range of 500° C. or less, and is hardly absorbed by the quartz lower chamber window. Thus, the semiconductor wafer can be efficiently heated by the LED lamps.

A substrate processing apparatus includes: a rotary table provided in a processing container; a stage provided on the rotary table to place a substrate thereon, and configured to revolve by a rotation of the rotary table; a heater configured to heat the substrate placed on the stage; and a rotation shaft configured to rotate together with the rotary table and support the stage to be rotatable; and a deflector configured to deflect heating light emitted from the heater toward the rotation shaft.

A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.

A silicon semiconductor wafer is transported into a chamber, and preheating of the semiconductor wafer is started in a nitrogen atmosphere by irradiation with light from halogen lamps. When the temperature of the semiconductor wafer reaches a predetermined switching temperature in the course of the preheating, oxygen gas is supplied into the chamber to change the atmosphere within the chamber from the nitrogen atmosphere to an oxygen atmosphere. Thereafter, a front surface of the semiconductor wafer is heated for an extremely short time period by flash irradiation. Oxidation is suppressed when the temperature of the semiconductor wafer is relatively low below the switching temperature, and is caused after the temperature of the semiconductor wafer becomes relatively high. As a result, a dense, thin oxide film having good properties with fewer defects at an interface with a silicon base layer is formed on the front surface of the semiconductor wafer.

A heating device for heating a substrate is provided. The heating device comprises a support portion configured to support the substrate, and a light irradiation unit configured to heat the substrate by irradiating the substrate supported by the support portion with light. A plurality of zones are set in the light irradiation unit, and each of the plurality of zones set in the light irradiation unit irradiates different portions of a surface of the substrate supporeted by the support portion with light. During the heating by the light irradiation unit, the plurality of zones take turns so that some zones of the plurality of zones are utilized.

A heating platform for heating a wafer is provided. The heating platform includes a support carrier, a detection module and a first heating module. The wafer is supported by the support carrier. The detection module is configured to monitor a surface condition of the wafer supported by the support carrier. The first heating module is disposed at a side of the support carrier. The first heating module includes a plurality of heating units electrically connected to the detection module, and the heating units is arranged in an array. A thermal treatment and a manufacturing method are further provided.