A target supply device may include a first container configured to contain a solid target substance; a second container including a first connection port connected to the first container, a second connection port connected to a first pressurized gas supply line, and a third connection port connected to a target substance lead-out path; a moving body including a first recessed portion configured to contain the solid target substance supplied from the first container and move the first recessed portion inside the second container to cause an opening of the first recessed portion to be overlapped sequentially with the first to third connection ports; a third container connected to both a second pressurized gas supply line and the target substance lead-out path and configured to melt the solid target substance supplied from the third connection port; and a nozzle configured to output the melted target substance supplied from the third container.

A device for generating soft x-rays includes an electron source configured to generate an electron beam comprising electron micro-bunches; an electron accelerator configured to accelerate the electron micro-bunches from the electron source; and a laser configured to generate a laser beam (536) colliding with the accelerated electron micro-bunches (534) in a counterpropagating direction to generate the soft x-rays by inverse Compton scattering. The electron source has a magneto-optical trap configured to produce an ultracold atomic gas; two counterpropagating excitation laser beams configured to produce a standing wave for inducing a periodic spatial modulation of the ultracold atomic gas along a beam propagation direction; and an ionization laser configured to induce photo-ionization of the ultracold atomic gas.

A radiation system configured to produce radiation and comprising a droplet generator (3) configured to produce a droplet of fuel traveling towards a plasma formation region, a laser system operative to generate a pre-pulse (PP) and a main pulse (MP), wherein the pre-pulse is configured to condition the droplet for receipt of the main pulse, and wherein the main pulse is configured to convert the conditioned droplet into plasma producing the radiation and a control system configured to control a spatial offset between the pre-pulse and the droplet in a plane transverse to a propagation direction of the pre-pulse, wherein the control system is configured to adjust the spatial offset so as to maximize a velocity change of the conditioned droplet in a plane transverse to a propagation direction of the main pulse.

Disclosed is a system for generating EUV radiation in which current flowing through target material in the orifice 320 of a nozzle in a droplet generator is controlled by providing alternate lower impedance paths for the current and/or by limiting a high frequency component of a drive signal applied to the droplet generator.

A lithography method in semiconductor fabrication is provided. The method includes generating multiple groups of small drops of a target material through a number of nozzles in such a way that small drops in each of the groups are aggregated to an elongated droplet of the target material. The method also includes generating a laser pulse from a laser generator to convert the elongated droplets to plasma which generates an EUV radiation. The method further includes exposing a semiconductor wafer to the EUV radiation.

A system for controlling plasma position in extreme ultraviolet lithography light sources may include a vacuum chamber, a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed from a metal material, a laser light source to fire a plurality of laser pulses, including at least a first pulse and a second pulse, into the vacuum chamber, a sensor to detect an observed plasma position within the chamber, wherein the observed plasma position comprises a position at which the plurality of laser pulses vaporizes a droplet of the stream of droplets to produce a plasma that emits extreme ultraviolet radiation, and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma position and a target plasma position.

A target supply device according to an aspect of the present disclosure includes a tank in which a target substance in a liquid form is housed, a vibration element configured to generate a droplet of the target substance by providing, through a vibration propagation path, vibration to the target substance output through the nozzle, a first temperature adjustment mechanism configured to adjust a temperature of a refrigerant to be supplied to the vibration propagation path component to a first temperature, a temperature sensor configured to detect a temperature of the vibration propagation path, a second temperature adjustment mechanism configured to adjust, to a second temperature, the temperature of the vibration propagation path to which the refrigerant is supplied, and a control unit configured to control the second temperature adjustment mechanism based on an output from the temperature sensor.

Systems and methods for generating extreme ultraviolet radiation from plasma are described herein. In an embodiment, gas is provided to a gas target within a vacuum chamber. A pulse laser or a pulse laser-driven wavelength conversion system provides a beam which is focused through a lens or microscope object onto the gas target to produce plasma. A collection mirror is then used to guide an extreme ultraviolet radiation beam from the plasma to a target location.

A target supply device includes a tank body portion holding a target substance; a communication portion connected to the tank body portion and including a filter that filters the melted target substance and a nozzle that discharges the target substance having passed through the filter; a main heater that heats the tank body portion; a sub-heater that heats the communication portion; and a control unit, the control unit being configured to set the main heater to a temperature higher than a melting point of the target substance before the target substance is melted, to set the sub-heater to a temperature lower than the melting point of the target substance until the target substance in the tank body portion is melted, and to set the sub-heater to a temperature higher than the melting point of the target substance after the target substance in the tank body portion is melted.

An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.