A method of producing atomic or quantum fuel includes the steps of providing a plurality of spinning bodies having mass, angularly accelerating the spinning bodies so as to spin each spinning body at angular velocities approaching the speed of light to thereby store energy in the spinning bodies, and in one embodiment so as to cause time dilation, triggering a conversion of the stored energy from an angular momentum of at least parts of the spinning bodies so as to convert the stored energy to translational or radiation energy.

A microwave electrothermal thruster (MET) and its control system is disclosed and claimed. The MET control system uses a dielectric resonator oscillator (DRO) in series with a GaN MMIC-based Solid State Power Amplifier (SSPA) to generate microwave energy, transfer it to a thrust chamber, and heat a propellant that exits a nozzle, providing thrust. The control system uses feedback to provide autonomous control of the MET. A wide variety of propellants may be used, including, for example, hydrazine, ammonia, and water.

This disclosure provides a graded composition including at least a first, second, and third material property zone each having a crystallographic configuration distinct from other zones. In some implementations, the graded composition has a first material in the first material property zone including a metal, the first material composed of metallic bonds between metal atoms present in the first material property zone; a second material that at least partially overlaps the first material in the first material property zone including carbon, the second material composed of covalent bonds between the carbon in the second material and the metal in the first material; and, a third material that at least partially overlaps the second material property zone including carbon, the third material composed of covalent bonds between the carbon of the third material. Each crystallographic configuration may include a cubic crystallographic lattice, a hexagonal lattice, a face or body-centered cubic lattice.

A microwave plasma equipment and a method of exciting plasma are disclosed. The microwave plasma equipment includes: a plasma reaction device having a cavity in which a base support and a plasma-forming area is provided; a conversion device having gradient electrodes, the gradient electrodes being disposed inside the cavity and configured to generate a gradient electric field in the plasma-forming area; a gas supply device configured to introduce gas into the cavity of the plasma reaction device; and a microwave generating device configured to generate and transmit microwave into the cavity of the plasma reaction device.

A microwave generator system for use in a microwave plasma enhanced chemical vapour deposition (MPECVD) system, the microwave generator system comprising: a microwave generator unit configured to produce microwaves at an operating power output suitable for fabricating synthetic diamond material via a chemical vapour deposition process; a fault detection system configured to detect a fault in the microwave generator unit which results in a reduction in the operating power output or a change in frequency; and a re-start system configured to restart the microwave generator unit in response to a fault being detected and recover the operating power output or frequency in a time period of less than 10 seconds after the fault in the microwave generator unit which caused the reduction in the operating power output or the change in frequency.

The invention relates to a plasma treatment device with a treatment chamber, at least one pair of microwave plasma sources and at least one voltage source. Each pair of microwave plasma sources consists of a first microwave plasma source and a second microwave plasma source, wherein the first and the second microwave plasma source each have a plasma source wall and, within this, a microwave coupling-in device and a plasma electrode. The first and the second microwave plasma source are arranged within the treatment chamber on the same side of one or more substrates to be processed and adjacently to one another. The plasma electrodes of the first microwave plasma source and the second microwave plasma source are electrically insulated from one another and electrically conductively connected to the at least one voltage source. Here, the at least one voltage source is suitable for supplying the plasma electrodes of the first and the second microwave plasma source with different potentials. The invention also relates to a method for operating a plasma treatment device of this kind.

A power amplifier for amplifying power of electromagnetic radiation is disclosed. The power amplifier comprising: a first gaseous fuel component being deuterium; a second gaseous fuel component, the second component being another gas than deuterium, the second gaseous fuel component being selected such that a nucleus mass reducing isotope shift in deuterium is less energy requiring than a nucleus mass increasing isotope shift in the second fuel component; and a fuel compartment (12) containing a mixture of the first and second gaseous fuel components. Also a method for amplifying power of electromagnetic radiation is disclosed.

A plasma treatment apparatus which performs uniform plasma treatment on a liquid. A plasma treatment apparatus includes a coaxial waveguide having an inner conductor, a first outer conductor, and a second outer conductor; a microwave generation unit; an outside tube which is located on the outer side of the first outer conductor and the second outer conductor and which in cooperation with the first outer conductor and the second outer conductor forms a flow path through which a liquid flows; and a plasma generation region. A first protrusion of the first outer conductor and a second protrusion of the second outer conductor face each other in a non-contacting state. The plasma generation region is a region extending along a facing location where the first protrusion of the first outer conductor and the second protrusion of the second outer conductor face each other.

Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

The invention relates to a pyrolysis method for recovering at least one component from a feedstock material using a thermal treatment. The feedstock material is delivered to a pyrolytic chamber (1), exposed to a controlled atmosphere, and heated to a treatment temperature of the at least one component in the pyrolytic chamber (1) by applying microwave energy. The pyrolysis breakdown products are separated by fractional condensation and a targeted component is decomposed in microwave plasma. The microwave plasma is generated such that plasma temperature is varied over a temperature range including a decomposition and/or cracking temperature of the at least one component.