A device for heating a bed of powder in an additive manufacturing apparatus comprising: a plasma generation device (20), said device being adapted to be positioned and displaced above the bed of powder, at a distance from the bed of powder allowing for the generation of the plasma thereon, an electrical power supply unit (22) for said plasma generation device, and a control unit (9) for controlling the power supply and the displacement of the plasma generation device The plasma generation device (20) comprises a magnetic plasma containment assembly.

A treatment apparatus which uses thermal or non-thermal plasma to treat urinary tract infections (UTIs) by destroying bacteria. The apparatus comprises an elongate probe that includes a coaxial cable for conveying radiofrequency (RF) electromagnetic (EM) energy and/or microwave EM energy, a probe tip connected at the distal end of the coaxial cable for receiving the RF and/or microwave EM energy, and a gas conduit for conveying gas to the probe tip. The probe tip comprises a first electrode connected to the inner conductor of the coaxial cable, and a second electrode connected to the outer conductor of the coaxial cable, and wherein the first electrode and second electrode are arranged to produce an electric field from the received RF and/or microwave EM energy across a flow path of gas received from the gas conduit to produce a thermal or a non-thermal plasma.

A device for generating compressed fluids includes a first process chamber for a first reaction material; a second process chamber for a second reaction material; a third process chamber for a fluid intended for compression; a unit for determining the nebulization and the consequent inlet of the first reaction material into process chamber; a unit intended for determining the emission of radio waves with variable frequencies in the direction of the process chamber, where the radio waves emitted by the unit interact with the first and second reaction material contained in third process chamber, for producing a high-energy plasma warms and thereby compresses the fluid contained in second process chamber.

Vacuum-treating a substrate or manufacturing a vacuum-treated substrate, including the steps: exposing a substrate in a vacuum chamber to a plasma environment, the plasma environment including a first plasma of a material deposition source and a second plasma of a non-deposition source; operating the plasma environment repeatedly between a first and a second state, the first state being defined by: a higher plasma supply power to the first plasma causing a higher material deposition rate and a lower plasma supply power delivered to the second plasma, the second state being defined by: a lower plasma supply power to the first plasma, compared with the higher plasma supply power to the first plasma and causing a lower material deposition rate and a higher plasma supply power to the second plasma, compared with the lower plasma supply power to the second plasma. Also, a vacuum deposition apparatus adapted to perform the method.

An apparatus or device for performing cold atmospheric plasma procedures. The device or apparatus has a housing, a chamber within the housing, an entry port to the chamber, a plurality of exit ports from the chamber, and a plurality of electrodes mounted in the housing, each of the plurality of electrodes having a distal end adjacent one of the plurality of exit ports. The entry port, chamber, exit ports and plurality of electrodes are configured to provide for an inert gas flowing in the entry port and through the chamber to the exit port to become plasmatized by electrical energy applied to the plurality of electrodes to form a cold plasma flowing from the exit ports.

An electrode for transmitting radiofrequency power to a plasma processing region includes a plate formed of semiconducting material and a high electrical conductivity layer formed on a top surface of the plate and integral with the plate. The high electrical conductivity layer has a lower electrical resistance than the semiconducting material of the plate. The electrode includes a distribution of through-holes. Each through-hole extends through an entire thickness of the electrode from a top surface of the high electrical conductivity layer to a bottom surface of the plate. In some embodiments, the plate can be formed of a silicon material and the high electrical conductivity layer can be a silicide material formed from the silicon material of the plate.

An ion source chamber with an embedded heater is disclosed. The heater comprises a radiant heater, such as a heat lamp or light emitting diodes, and is disposed within the ion source chamber. The radiant heat from the heater warms the interior surfaces of the ion source chamber. Further, the ion source chamber is designed such that the plasma is generated in a portion of the ion source chamber that does not contain the heater. Additionally, a controller may be in communication with the heater so as to maintain the ion source chamber at a desired temperature when a plasma is not being generated in the ion source chamber.

An integrated gas-enhanced electrosurgical generator. The generator comprises a high frequency power module, a low frequency power module and a gas module. The high frequency power module adapted to generate an electrical energy having a band of frequencies centered around a first frequency, wherein the electrical energy has a first power as the first frequency and a second power lower than the first power at a second frequency lower than the first frequency. The low frequency power module having an input connected to an output of the high frequency module. The low frequency module comprises a resonant transformer comprising a ferrite core, a primary coil and a secondary coil, the secondary coil having a larger number of turns than the primary coil, wherein the resonant transformer has a resonant frequency equal to the second frequency. The gas module is adapted to control a flow of an inert gas.

Some embodiments include a plasma system that includes a plasma chamber; an RF driver driving RF bursts into the plasma chamber with an RF frequency greater than 2 MHz; a nanosecond pulser driving pulses into the plasma chamber with a pulse repetition frequency a peak voltage, the pulse repetition frequency being less than the RF frequency and the peak voltage being greater than 2 kV; a first filter disposed between the RF driver and the plasma chamber; and a second filter disposed between the nanosecond pulser and the plasma chamber.

A method for creating a random anti-reflective surface structure on an optical fiber including a holder configured to hold the optical fiber comprising a groove and a fiber connector, an adhesive material to hold the optical fiber in the holder and fill any gap between the optical fiber and the holder, a glass to cover the adhesive material and the optical fiber, and a reactive ion etch device. The reactive ion etch device comprises a plasma and is configured to expose an end face of the optical fiber to the plasma. The plasma is configured to etch a random anti-reflective surface structure on the end face of the optical fiber.