Patent classifications
H05H1/4645
Antireflective surface structures for active and passive optical fiber
A system and method for creating a random anti-reflective surface structure on an optical fiber including a holder configured to hold the optical fiber comprising a groove and a fiber connector, an adhesive material to hold the optical fiber in the holder and fill any gap between the optical fiber and the holder, a glass to cover the adhesive material and the optical fiber, and a reactive ion etch device. The reactive ion etch device comprises a plasma and is configured to expose an end face of the optical fiber to the plasma. The plasma is configured to etch a random anti-reflective surface structure on the end face of the optical fiber.
Plasma generation apparatus including measurement device and plasma thruster
A plasma generation apparatus, and a plasma thruster configured to use the plasma generation apparatus are disclosed. The plasma generation apparatus includes a discharge vessel, a light-emitting monitor, a probe measuring instrument, a control device, and an optical axis driving unit. The discharge vessel is configured to ionize gas which is introduced to an inside thereof so as to generate plasma. The light-emitting monitor is configured to measure electron density of the plasma by emission spectra of the plasma. The probe measuring instrument is configured to measure the electron density of the plasma by a probe in the discharge vessel.
PLASMA POWER GENERATOR (Z-box and Z-tower)
A plasma power generator wherein a plasma is generated by subjecting oxygen (O2) to a strong electromagnetic field. The oxygen plasma enters a chamber and is combined with free electrons from an electron-donation element thereby producing heat.
Magnetic induction plasma source for semiconductor processes and equipment
Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.
LOAD CURRENT DERIVED SWITCH TIMING OF SWITCHING RESONANT TOPOLOGY
Systems, devices, and methods are discussed relating to plasma sources using load current switch timing of zero volt switching resonant topology.
A GAS PURIFYING APPARATUS
A gas purifying apparatus, including: at least one cylindrical ground electrode configured to receive gas flowing therethrough; a discharge electrode disposed centrally within each of the at least one cylindrical ground electrode; and a power supply electrically connected to the discharge electrode and the at least one cylindrical ground electrode so as to produce an electric field and a corona discharge from the discharge electrode to a corresponding cylindrical ground electrode to generate ions and free electrons into the gas to ionise substances in the gas for gas purification, wherein the discharge electrode and the corresponding cylindrical ground electrode form at least one plasma chamber when power from the power supply is applied, and wherein the discharge electrode includes: at least one annular plate having an outer edge extending towards the corresponding cylindrical ground electrode.
PLASMA DEVICE FOR SKIN REPAIR
The present invention provides a plasma device for skin repair, which includes a plasma head, a power supply, a gas supply source, and a control box. The plasma head includes an inner sleeve and an outer sleeve which are sleeved together. The inner sleeve has a first bottom portion having several first through holes. The outer sleeve has a second bottom portion having several second through holes. A gap is formed between the first bottom portion and the second bottom portion. The power supply is configured to provide 13.56 MHz to 54 MHz radio frequency power to generate a discharge in the gap. The gas supply source is configured to provide reaction gas into the gap, and plasma is formed by the reaction gas under the discharge. The control box is configured to control operating parameters of the plasma head, the power supply, and the gas supply source.
Systems and methods for variable gain tuning of matching networks
Disclosed is a method and apparatus for utilizing a variable gain algorithm for adjusting a capacitor in an automatic radio frequency (RF) impedance matching network. The apparatus may operate in a closed-loop feedback control system, with one or more error signals driving the capacitors within the system. To achieve a critically damped control system response, multiple operating regions for the matching network and its constituent elements may be identified and a set of gains (e.g., different per region) may be applied to the error signals in the control system when operating in those regions. An operating region may be defined by characteristics of the input signals measured by the apparatus, calculated by the apparatus, or the state of the apparatus itself. These features may be arranged in a look up table (or determined by calculation) for the apparatus to use to determine the variable gains in the system.
Method and system for forming a patterned metal film on a substrate
A method and system for forming a thin patterned metal film on a substrate are presented. The method includes applying an ink composition on a pre-treated surface of the substrate, wherein the ink composition includes at least metal cations; and exposing at least the applied ink composition on the substrate to a low-energy plasma, wherein the low-energy plasma is operated according to a first set of exposure parameters.
System and method for plasma-electron sterilization
Provided are a system and method for sterilizing one or more medium via plasma exposure. The sterilization may be accomplished by exposing a respective medium to a given electrical field generated by electrodes disposed to target such medium, and through, optionally, further application of a magnetic field having a portion thereof disposed orthogonally to the generated electrical field.