Devices are provided for generating a plasma field for dissociating water into elemental hydrogen and water. The elemental hydrogen may be used directly to produce power, or may be stored for use as an energy source or as a commodity. The devices of the present invention can provide on site, point of use sources for producing elemental hydrogen. In addition, the devices can produce a net positive energy output.

Devices are provided for generating a plasma field for dissociating water into elemental hydrogen and water. The elemental hydrogen may be used directly to produce power, or may be stored for use as an energy source or as a commodity. The devices of the present invention can provide on site, point of use sources for producing elemental hydrogen. In addition, the devices can produce a net positive energy output.

The invention relates to an apparatus (1) for producing a plasma, having at least one first electrode (3), at least one second electrode (5), which is arranged at a distance from the first electrode (3), a voltage source (7), which is connected to at least one electrode (3,59) selected from the first electrode (3) and the second electrode (5) such that a potential difference between the at least one first electrode (3) and the at least one second electrode (5) can be produced by the voltage source (7), wherein the at least one first electrode (3) and the at least one second electrode (5) define at least one discharge path (9) for an electrical discharge in a discharge region (11) between the at least one first electrode (3) and the at least one second electrode (5). In this case, a magnetic field arrangement (15) is provided that is set up and arranged relative to the at least one first electrode (3) and the at least one second electrode (5), to provide a magnetic field in the discharge region (11), so that a magnetic field vector (B) of the magnetic field is oriented at an angle to the discharge path (9).

The invention relates to an apparatus (1) for producing a plasma, having at least one first electrode (3), at least one second electrode (5), which is arranged at a distance from the first electrode (3), a voltage source (7), which is connected to at least one electrode (3,59) selected from the first electrode (3) and the second electrode (5) such that a potential difference between the at least one first electrode (3) and the at least one second electrode (5) can be produced by the voltage source (7), wherein the at least one first electrode (3) and the at least one second electrode (5) define at least one discharge path (9) for an electrical discharge in a discharge region (11) between the at least one first electrode (3) and the at least one second electrode (5). In this case, a magnetic field arrangement (15) is provided that is set up and arranged relative to the at least one first electrode (3) and the at least one second electrode (5), to provide a magnetic field in the discharge region (11), so that a magnetic field vector (B) of the magnetic field is oriented at an angle to the discharge path (9).

A chamber top for a processing chamber is provided. The chamber top includes a first plasma source oriented horizontally over the chamber top and a second plasma source oriented horizontally over the chamber top. The second plasma source is arranged concentrically around the first plasma source. Also included is a first plurality of ferrites encircling the first plasma source and a second plurality of ferrites encircling the second plasma source. A first primary winding is disposed around an outer circumference of the first plasma source and a second primary winding disposed around an outer circumference of the second plasma source. The first and second primary windings pass through the respective plurality of ferrites. A plurality of outlets is disposed on a lower portion of the first and second plasma sources, and the plurality of outlets is oriented between adjacent ones of the first and second plurality of ferrites. The plurality of outlets is configured to connect the first and second plasma sources of the chamber top to the processing chamber.

A chamber top for a processing chamber is provided. The chamber top includes a first plasma source oriented horizontally over the chamber top and a second plasma source oriented horizontally over the chamber top. The second plasma source is arranged concentrically around the first plasma source. Also included is a first plurality of ferrites encircling the first plasma source and a second plurality of ferrites encircling the second plasma source. A first primary winding is disposed around an outer circumference of the first plasma source and a second primary winding disposed around an outer circumference of the second plasma source. The first and second primary windings pass through the respective plurality of ferrites. A plurality of outlets is disposed on a lower portion of the first and second plasma sources, and the plurality of outlets is oriented between adjacent ones of the first and second plurality of ferrites. The plurality of outlets is configured to connect the first and second plasma sources of the chamber top to the processing chamber.

A plasma generating device includes a plasma source having a plasma source hollow body (1) and an electron emission unit (5) for emitting free electrons into the plasma source hollow body. The plasma source hollow body (1) has a first gas inlet (7a) and a plasma source opening (10) which forms an opening to a vacuum chamber. An anode has an anode hollow body (2). The anode hollow body (2) has a second gas inlet (7b) and an anode opening (11) which forms an opening to the vacuum chamber, and a voltage source (8) the negative pole of which is connected to the electron emission unit (5) and the positive pole of which is connected to the anode hollow body (2). The positive pole of the voltage source (8) is electrically connected by a first shunt (6a) to the plasma source hollow body.

A plasma generating device includes a plasma source having a plasma source hollow body (1) and an electron emission unit (5) for emitting free electrons into the plasma source hollow body. The plasma source hollow body (1) has a first gas inlet (7a) and a plasma source opening (10) which forms an opening to a vacuum chamber. An anode has an anode hollow body (2). The anode hollow body (2) has a second gas inlet (7b) and an anode opening (11) which forms an opening to the vacuum chamber, and a voltage source (8) the negative pole of which is connected to the electron emission unit (5) and the positive pole of which is connected to the anode hollow body (2). The positive pole of the voltage source (8) is electrically connected by a first shunt (6a) to the plasma source hollow body.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

Electrode assemblies for plasma reactors include a structure or device for constraining an arc endpoint to a selected area or region on an electrode. In some embodiments, the structure or device may comprise one or more insulating members covering a portion of an electrode. In additional embodiments, the structure or device may provide a magnetic field configured to control a location of an arc endpoint on the electrode. Plasma generating modules, apparatus, and systems include such electrode assemblies. Methods for generating a plasma include covering at least a portion of a surface of an electrode with an electrically insulating member to constrain a location of an arc endpoint on the electrode. Additional methods for generating a plasma include generating a magnetic field to constrain a location of an arc endpoint on an electrode.