Electrode assemblies for plasma reactors include a structure or device for constraining an arc endpoint to a selected area or region on an electrode. In some embodiments, the structure or device may comprise one or more insulating members covering a portion of an electrode. In additional embodiments, the structure or device may provide a magnetic field configured to control a location of an arc endpoint on the electrode. Plasma generating modules, apparatus, and systems include such electrode assemblies. Methods for generating a plasma include covering at least a portion of a surface of an electrode with an electrically insulating member to constrain a location of an arc endpoint on the electrode. Additional methods for generating a plasma include generating a magnetic field to constrain a location of an arc endpoint on an electrode.

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse.

A liquid treatment apparatus includes a liquid storing vessel, a first electrode, a second electrode at least partly arranged inside the vessel, a tubular first insulator surrounding a first-electrode lateral surface with a first space interposed therebetween, and including a first opening in an end surface in contact with the liquid, a tubular second insulator surrounding the first-electrode lateral surface inside the first insulator, a gas supply device supplying gas into the first space and ejecting the gas into the liquid through the first opening, and a power supply applying a voltage between the first and second electrodes and producing plasma. The second insulator is arranged with a second space interposed between the first and second insulators. Portions of the first and second insulators, those portions being positioned inside the vessel, are covered with the gas when the gas is supplied into the first space by the gas supply device.

A liquid treatment apparatus includes a liquid storing vessel, a first electrode, a second electrode at least partly arranged inside the vessel, a tubular first insulator surrounding a first-electrode lateral surface with a first space interposed therebetween, and including a first opening in an end surface in contact with the liquid, a tubular second insulator surrounding the first-electrode lateral surface inside the first insulator, a gas supply device supplying gas into the first space and ejecting the gas into the liquid through the first opening, and a power supply applying a voltage between the first and second electrodes and producing plasma. The second insulator is arranged with a second space interposed between the first and second insulators. Portions of the first and second insulators, those portions being positioned inside the vessel, are covered with the gas when the gas is supplied into the first space by the gas supply device.

A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.

A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse.

A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.

A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.

A thruster comprising: a chamber to contain a fluid; a plurality of nozzles to exhaust neutral particles derived from the fluid in the chamber, wherein each nozzle has a converging section and the converging section includes a first electrode; a second electrode located distal to the first electrode to provide a voltage differential between the first and second electrodes sufficient to create plasma ions from the fluid and the voltage differential accelerates the plasma ions on a flow path through the converging section, and wherein at least one or more of the accelerated plasma ions are neutralised to form the neutral particles by charge exchange with other neutral particles, or by recombination with electrons, on the flow path.