A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.

A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.

An electronic device incorporating a high voltage power supply connected to a pair of metal plates spaced to maintain a continuous high current arc of electricity creating an Ion Plasma discharge for the purpose of vaporizing documents placed between the plates. Magnetic containment coils around the outside of the metal plates are phase synchronized to the magnetic field created by the Ion Plasma arc to maintain the position of the arc between the plates and to direct the position of the arc in a predetermined pattern to search for any material between the plates that has not been disintegrated.

A nitric oxide generator generates nitric oxide from a mixture of nitrogen and oxygen such as air treated by a pulsating electrical discharge. The desired concentration of nitric oxide is obtained by controlling at least one of a frequency of the pulsating electrical discharge and duration of each electrical discharge pulse.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

A device for heating a bed of powder in an additive manufacturing apparatus comprising: a plasma generation device (20), said device being adapted to be positioned and displaced above the bed of powder, at a distance from the bed of powder allowing for the generation of the plasma thereon, an electrical power supply unit (22) for said plasma generation device, and a control unit (9) for controlling the power supply and the displacement of the plasma generation device The plasma generation device (20) comprises a magnetic plasma containment assembly.

Vacuum-treating a substrate or manufacturing a vacuum-treated substrate, including the steps: exposing a substrate in a vacuum chamber to a plasma environment, the plasma environment including a first plasma of a material deposition source and a second plasma of a non-deposition source; operating the plasma environment repeatedly between a first and a second state, the first state being defined by: a higher plasma supply power to the first plasma causing a higher material deposition rate and a lower plasma supply power delivered to the second plasma, the second state being defined by: a lower plasma supply power to the first plasma, compared with the higher plasma supply power to the first plasma and causing a lower material deposition rate and a higher plasma supply power to the second plasma, compared with the lower plasma supply power to the second plasma. Also, a vacuum deposition apparatus adapted to perform the method.

A vacuum arc thruster (VAT) for a propulsion system of a micro-satellite is provided. The VAT includes an anode, a cathode including a fuel, and an insulator between the anode and the cathode. The VAT is operable to create an arc between the anode and the cathode and discharge plasma through the diverging nozzle as thrust. The anode may define a diverging nozzle. The VAT may further include a Halbach array including a plurality of permanent magnets arranged in a ring, each of the permanent magnets of the ring having a radially inward positioned north pole and a radially outward positioned south pole.

A vacuum arc thruster (VAT) for a propulsion system of a micro-satellite is provided. The VAT includes an anode, a cathode including a fuel, and an insulator between the anode and the cathode. The VAT is operable to create an arc between the anode and the cathode and discharge plasma through the diverging nozzle as thrust. The anode may define a diverging nozzle. The VAT may further include a Halbach array including a plurality of permanent magnets arranged in a ring, each of the permanent magnets of the ring having a radially inward positioned north pole and a radially outward positioned south pole.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.