H05K3/002

Process for metallizing a component

The present invention relates to a process for producing one or more electrical contacts on a component, comprising (a) applying one or more coatings on the component, where at least one of the coatings is a coating of an electrically conductive material, (b) applying a self-passivating metal or semiconductor and/or a dielectric material on the coated component, (c) structuring the passivating coating by laser treatment or etching, (d) contacting the structured coating with an electroplating bath, (e) etching the regions not covered with the galvanically deposited metal.

GLASS SUBSTRATE WITH THROUGH GLASS VIAS
20200303188 · 2020-09-24 ·

A method for producing a glass substrate with through glass vias according to the present invention includes: irradiating a glass substrate (10) with a laser beam to form a modified portion; forming a first conductive portion (20a) on a first principal surface of the glass substrate (10), the first conductive portion (20a) being positioned in correspondence with the modified portion (12); and forming a through hole (14) in the glass substrate (10) after formation of the first conductive portion by etching at least the modified portion (12) using an etchant. This method allows easy handling of a glass substrate during formation of a conductive portion such as a circuit on the glass substrate, and is also capable of forming a through hole in the glass substrate relatively quickly while preventing damage to the conductive portion such as a circuit formed on the glass substrate.

WIRED CIRCUIT BOARD, PRODUCING METHOD THEREOF, AND IMAGING DEVICE

A method for producing a wired circuit board, the method including the steps of: a first step of providing an insulating layer having an opening penetrating in the thickness direction at one side surface in the thickness direction of the metal plate, a second step of providing a first barrier layer at one side surface in the thickness direction of the metal plate exposed from the opening by plating, a third step of providing a second barrier layer continuously at one side in the thickness direction of the first barrier layer and an inner surface of the insulating layer facing the opening, a fourth step of providing a conductor layer so as to contact the second barrier layer, and a fifth step of removing the metal plate by etching.

Substrate integrated waveguide and method for manufacturing the same

A method for manufacturing a substrate integrated waveguide for a millimeter wave signal is disclosed. In the method, a gold layer is disposed on a top surface of the silicon substrate using a lift-off process. Next, two parallel rows of substantially equal spaced vias are formed in the silicon substrate using a through-silicon-via etching process. Then, a copper layer is disposed on the bottom side of the silicon substrate and on interior surfaces of each via. The separation between the copper layer and the gold layer define a height of the substrate integrated waveguide, while the separation between the two parallel rows of substantially equal spaced vias define a width of the substrate integrated waveguide. In some implementations the length of the substrate defines a length of the substrate integrated waveguide, and the length, width, and height define a resonator that is resonant at a millimeter wave frequency.

Method for producing glass substrate with through glass vias and glass substrate

A method for producing a glass substrate with through glass vias according to the present invention includes: irradiating a glass substrate (10) with a laser beam to form a modified portion; forming a first conductive portion (20a) on a first principal surface of the glass substrate (10), the first conductive portion (20a) being positioned in correspondence with the modified portion (12); and forming a through hole (14) in the glass substrate (10) after formation of the first conductive portion by etching at least the modified portion (12) using an etchant. This method allows easy handling of a glass substrate during formation of a conductive portion such as a circuit on the glass substrate, and is also capable of forming a through hole in the glass substrate relatively quickly while preventing damage to the conductive portion such as a circuit formed on the glass substrate.

COMPOSITION FOR FORMING UNDERLAYER FILM FOR IMPRINTS, KIT, CURABLE COMPOSITION FOR IMPRINTS, LAMINATE, METHOD FOR PRODUCING LAMINATE, METHOD FOR PRODUCING CURED PRODUCT PATTERN, AND METHOD FOR PRODUCING CIRCUIT BOARD
20200216709 · 2020-07-09 · ·

There are provided a composition for forming an underlayer film for imprints which imparts excellent uniformity in thickness of a film to be formed, has excellent wettability with respect to a curable composition for imprints, and imparts stability in a film to be formed; a kit; a curable composition for imprints; a laminate; a method for producing a laminate; a method for producing a cured product pattern; and a method for producing a circuit board. A composition for forming an underlayer film for imprints includes a polyfunctional (meth)acrylate that includes at least one aromatic ring or aromatic heterocyclic ring and has a viscosity of 11 to 600 mPa.Math.s at 23 C. and a molecular weight of 200 or more, and a solvent.

HERMETIC METALLIZED VIA WITH IMPROVED RELIABILITY

According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 m at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 m at the second major surface and fully fills the via between the first cavity and the second cavity.

Electronic device

An electronic device is provided and including a first substrate including a first glass substrate and a first conductive layer; a second substrate including: a second glass substrate which is disposed to be apart from the first conductive layer and includes a first surface opposed to the first conductive layer and a second surface opposite to the first surface, a second conductive layer disposed on the second surface, and a first hole penetrating the second glass substrate; and a connecting material electrically connecting the first conductive layer and the second conductive layer via the first hole, wherein the first hole is shaped as a funnel, and the connecting material includes a hollow part in which an insulative filling material is filled.

TRANSPORT ROLLER
20200055684 · 2020-02-20 ·

The present invention refers to a new type of transport roller providing a modified surface to provide improved transport properties for new substrates. Furthermore, it refers to horizontal transport systems beneficially utilizing such transport rollers, especially for providing retaining roller pairs. Additionally, the present invention refers to a treatment device containing such transport roller or horizontal transport system. Furthermore, it refers to a method for treating a substrate and the use of such transport roller.

SUBSTRATE INTEGRATED WAVEGUIDE AND METHOD FOR MANUFACTURING THE SAME
20200044303 · 2020-02-06 · ·

A method for manufacturing a substrate integrated waveguide for a millimeter wave signal is disclosed. In the method, a gold layer is disposed on a top surface of the silicon substrate using a lift-off process. Next, two parallel rows of substantially equal spaced vias are formed in the silicon substrate using a through-silicon-via etching process. Then, a copper layer is disposed on the bottom side of the silicon substrate and on interior surfaces of each via. The separation between the copper layer and the gold layer define a height of the substrate integrated waveguide, while the separation between the two parallel rows of substantially equal spaced vias define a width of the substrate integrated waveguide. In some implementations the length of the substrate defines a length of the substrate integrated waveguide, and the length, width, and height define a resonator that is resonant at a millimeter wave frequency.