Patent classifications
H05K3/146
LOW-TRANSMISSION-LOSS COPPER-BASED COMPOSITE MATERIAL AND PREPARATION METHOD THEREOF, PCB, AND ELECTRONIC COMPONENT
The present disclosure relates to the technical field of composite materials, in particular, to a low-transmission-loss copper-based composite material and a preparation method thereof, a PCB, and an electronic component. The low-transmission-loss copper-based composite material comprises: a plurality of lamination units repeatedly stacked in sequence along a preset direction, each lamination unit comprising a conductor layer and an insulation layer covering a surface of the conductor layer along the preset direction, and wherein the conductor layer comprises a single-crystal copper layer. The low-transmission-loss copper-based composite material provided in the present disclosure can effectively increase the effective area for signal transmission of the low-transmission-loss copper-based composite material, and can effectively reduce the transmission loss of the entire low-transmission-loss copper-based composite material without reducing the surface roughness of the single-crystal copper layer, which facilitates the application of the low-transmission-loss copper-based composite material in high-frequency high-speed signal transmission.
Printed wiring board
A printed wiring board includes a first conductor layer, a resin insulating layer, a second conductor layer, and a via conductor formed in an opening of the insulating layer and connecting the first conductor and second conductor layers. The second conductor layer and via conductor include a seed layer having a first portion formed on the surface of the insulating layer, a second portion formed on an inner wall surface in the opening, and a third portion formed on a portion of the first conductor layer exposed by the opening. A thickness of the first portion is greater than a thickness of the second portion and a thickness of the third portion. The seed layer includes a first layer including an alloy including copper, aluminum and one or more metals selected from nickel, zinc, gallium, silicon, and magnesium, and a second layer formed on the first layer and including copper.
Fabricating functional circuits on 3D freeform surfaces via intense pulsed light-induced zinc mass transfer
The invention includes methods of forming electronic circuitry on a target surface using intense pulsed light-induced mass transfer (IPLMT) of metal nanoparticles (NPs) by applying a pliable mask to a target surface, coating a carrier film with metal NPs, mounting the carrier film to the target surface and over the pliable mask so that the pliable mask is sandwiched between the target surface and the metal NPs. and exposing the metal NPs to light energy to cause atoms of the metal NPs to evaporate and transport through openings of the pliable mask and condense on the target surface, producing a conductive pattern of condensed metal on the target surface. Certain implementations may utilize a kirigami-patterned pliable mask to enhance conformity to a freeform 3D target surface. In certain implementations, zinc (Zn) may be formed by IPLMT of Zn NPs to the target surface.
Inductor assembly and manufacturing method for inductor assembly
An inductor assembly and a manufacturing method for an inductor assembly are provided. The inductor assembly includes a circuit board, a magnetic component, and a winding wire. The circuit board defines a groove body, the magnetic component is embedded in the groove body, and the winding wire is arranged on the magnetic component, surrounds along a thickness direction of the magnetic component, and is electrically connected to the circuit board.
High-Density Multi-Level Interconnects for Harsh Environments and Power Packaging and Method of Making The Same
A high-density multi-level interconnect device for harsh environment applications combines thin-film and thick-film processing technologies to achieve superior performance in extreme conditions. The device comprises an alumina substrate with a thin-film metal layer deposited via electron beam evaporation, including a 20 nm titanium adhesion layer and a 400 nm gold layer, followed by a screen-printed thick-film gold layer. The layers are annealed at 850 C. for 10 minutes to promote strong adhesion. This hybrid approach provides improved die shear strength and enhanced thermal cycling resistance. The interconnects are suitable for wide bandgap semiconductor devices operating at temperatures up to 500 C. in harsh environments including elevated temperature, high pressure, and acidic conditions.
CO-JET NOZZLE ASSEMBLY AND ANOMALY DETECTION
A nozzle assembly may include a nozzle body defining a longitudinal axis, a central conduit extending through the nozzle body along the longitudinal axis, a first outer annular flow channel extending through the nozzle body, a first electrode positioned radially opposed to a second electrode with respect to the longitudinal axis, an aerosol generator body positioned upstream of the nozzle body, a first chamber formed in the aerosol generator body, a second outer annular flow channel extending through the aerosol generator body, the second outer annular flow channel concentrically surrounding the first chamber about the longitudinal axis, the second outer annular flow channel being radially outward from the longitudinal axis relative to the first chamber.