Disclosed is a method of forming wiring of a substrate includes masking a substrate side portion, on which the wiring will be formed, by attaching a deposition mask to the substrate; and forming the wiring on the substrate side portion based on sputtering after introducing the masked substrate into a chamber.

A wiring substrate includes: an insulating substrate comprising a principal face; a wiring line located on the principal face; and a protruding portion on a side of the wiring line, the protruding portion being smaller in thickness than the wiring line and protrudes from the side along the principal face.

The present disclosure provides a composite conductive substrate exhibiting enhanced properties both in the folding endurance and the electric conductivity and a method of manufacturing the composite conductive substrate. A composite conductive substrate according to an exemplary embodiment of the present disclosure includes: an insulating layer; a metal nanowire structure embedded beneath one surface of the insulating layer; and a metal thin film coupled to the metal nanowire structure. The composite conductive substrate may be fabricated in an order of the insulating film, the metal nanowire structure, and the metal thin film, or vice versa.

An implantable electrical connecting device includes a first elastic multi-ply layer and a second elastic multi-ply layer. The first elastic multi-ply layer has a first electrically conductive layer and a plurality of first electrical contacts electrically conductively connected to the first electrically conductive layer of the first elastic multi-ply layer. The second elastic multi-ply layer has a first electrically conductive layer and a plurality of second electrical contacts electrically conductively connected to the first electrically conductive layer of the second elastic multi-ply layer. The second electrical contacts make contact with the first electrical contacts.

In the present invention, an infrared radiation apparatus is disposed at a position apart from a conveyor in a lower chamber. The infrared radiation apparatus performs heating treatment for a plurality of substrates placed on an upper surface of a belt by radiating infrared light upwardly from a plurality of infrared lamps. In a film forming chamber, a thin film is formed on the substrates placed on the upper surface of the belt by simultaneously performing the heating treatment of infrared radiation of the infrared radiation apparatus and mist spray treatment of a thin film forming nozzle.

Embodiments of the present technology are directed at systems and methods for impregnating PCBs with CNT traces to create functional CNT-based PCBs. The functional CNT-based PCBs exhibit high structural stability and improved electrical and thermal properties. Based on fixed impregnation and densification techniques, perfect or near-perfect alignment of CNT traces on the PCB substrates is achieved. For example, application of the disclosed technology results in traces of CNTs aligned on a PCB substrate in parallel to one another in a butt-jointed arrangement from end-to-end of the PCB substrate. Advantageously, the disclosed methods eliminate occurrence of misorientation or misalignment of the CNT traces. Sensors and electrical/electronic devices built with PCBs using CNT traces provide significant advances for SWaP (reduced Size, Weight, and Power consumption).

In a film forming apparatus of the first embodiment, an infrared radiation apparatus and a thin film forming nozzle are separately disposed from each other so that heating treatment performed in a heating chamber and mist spray treatment performed in a film forming chamber are not affected by each other. The film forming apparatus of the first embodiment performs the heating treatment of infrared radiation of the infrared radiation apparatus in the heating chamber and then performs the mist spray treatment of the thin film forming nozzle in the film forming chamber.

Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.

The present invention discloses a super-flexible high electrical and thermal conductivity flexible base material and a preparation method thereof, wherein the method comprises the steps of: S1. carbonizing and blackleading a polyimide thin film, doping nano-metal to the polyimide thin film, and performing ion implantation and ion exchange; S2. performing plasma irradiation modification treatment on a surface of the material obtained after the step S1 to form a heterogeneous surface layer; and S3. forming a metal conductor layer on the heterogeneous surface layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD), so as to obtain the super-flexible high-ductility high electrical and thermal conductivity flexible base material. The method can obtain the C-C-FPC, C-C-COF or C-C-FCCL flexible circuit base material with super flexibility, high ductility, high electrical conductivity, high thermal conductivity and high frequency performance.

A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.