Provided is a micro-roughened electrodeposited copper foil, which comprises a micro-rough surface and multiple copper nodules. The micro-rough surface includes multiple copper nodule-free areas and copper nodule-arranged areas. The micro-rough surface of 120 m.sup.2 has at least five copper nodule-free areas of 62500 nm.sup.2 or more. Each copper nodule-arranged area has a length of 300 nm to 2500 nm and includes three to fifty copper nodules with a mean width of 10 nm to 300 nm. Besides, the micro-roughened electrodeposited copper foil has an Rlr value of 1.05 to 1.60, or an Sdr of 0.01 to 0.08. With the surface profile and/or characteristics, the electron path distance can be shortened, such that the micro-roughened electrodeposited copper foil can reduce the insertion loss of the copper clad laminate at high frequencies and have the desired peel strength.

An object is to provide, for example, a method for manufacturing a film-forming substrate that can sufficiently improve both bleeding of a resin composition and adhesion between the resin composition and a metal substrate surface. For example, provided is a method for manufacturing a film-forming substrate having a film of a resin composition formed on a metal substrate surface, the method including: an etching step of etching a metal substrate surface with a micro-etching agent; a surface treatment step of bringing the etched metal substrate surface into contact with a surface treatment agent to perform a surface treatment such that a contact angle of water on the surface is 50 or more and 150 or less; and a film forming step of forming a film of a resin composition on the surface-treated metal substrate surface by an inkjet method.

A microetching agent is an acidic aqueous solution containing an organic acid, cupric ions, and halide ions. The molar concentration of halide ion of the microetching agent is 0.005 to 0.1 mol/L. By bringing the microetching agent into contact with a copper surface, the copper surface is roughened. An average etching amount in the depth direction during roughening is preferably 0.4 m or less. The microetching agent can impart on copper surfaces a roughened shape having excellent adhesiveness to resins and the like, even with a low etching amount.

Embodiments of the present disclosure describe techniques for providing an apparatus with a substrate provided with plasma treatment. In some instances, the apparatus may include a substrate with a surface that comprises a metal layer to provide signal routing in the apparatus. The metal layer may be provided in response to a plasma treatment of the surface with a functional group containing a gas (e.g., nitrogen-based gas), to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal. The transition metal catalyst is to enhance electroless plating of the surface with the metal. Other embodiments may be described and/or claimed.

Disclosed are: a microetching agent which can form roughened shapes less affected by differences in the crystallinity of the copper and with which roughened shape excellent in terms of adhesiveness to resins, etc. can be formed on either electrolytic copper or rolled copper; and a method for producing a wiring board which includes a step of roughening a copper surface using the microetching agent. In the present invention, the microetching agent for copper is an acidic aqueous solution containing an inorganic acid, a cupric ion source, a halide ion source, and a polymer. The polymer has a functional group containing a nitrogen atom. It is preferable that the microetching agent contain a sulfate ion source.

An etching solution for copper and copper alloy surfaces comprising at least one acid, at least one oxidising agent suitable to oxidise copper, at least one source of halide ions and further at least one polyamide containing at least one polymeric moiety according to formula (I) ##STR00001##
wherein each a is independently from each other selected from 1, 2 and 3; each b is an integer independently from each other ranging from 5 to 10000; each R.sup.1 is a monovalent residue independently from each other selected from the group consisting of substituted or unsubstituted C1-C8-alkyl groups and a method for its use are provided. Such etching solution is particularly useful for retaining the shape of treated copper and copper alloy lines.

A wiring substrate includes a first conductor layer, an insulating layer formed on the first conductor layer, a second conductor layer formed on the insulating layer, a connection conductor penetrating through the insulating layer and connecting the first and second conductor layers, and a coating film formed on a surface of the first conductor layer and adhering the first conductor layer and the insulating layer. The first conductor layer includes a conductor pad in contact with the connection conductor such that the conductor pad has a surface having a first region and a second region on second conductor layer side and that surface roughness of the first region is different from surface roughness of the second region, and the conductor pad of the first conductor layer is formed such that the first region is covered by the coating film and that the second region is covered by the connection conductor.

A second main surface of the copper plate is opposite a first main surface of the copper plate, and is bonded to a silicon nitride ceramic substrate by the bonding layer. A first portion and a second portion of an end surface of the copper plate form an angle of 135 to 165 on an outside of the copper plate. An extended plane of the first portion and the second main surface form an angle of 110 to 145 a side where the second portion is located. A distance from the second main surface to an intersection of the first portion and the second portion in a direction of a thickness of the copper plate is 10 to 100 m. The second main surface extends beyond the extended plane of the first portion by a distance of 10 m or more.

Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a trace disposed on a conductive layer. The semiconductor package has one or more adhesion anchoring points and a plurality of portions on the trace. An adhesion anchoring point is between two portions on the trace. A surface roughness of an adhesion anchoring point is greater than a surface roughness of a portion on the trace. The trace may be a high-speed input/output (HSIO) trace. The semiconductor package may include via pads disposed on each end of the trace, and a dielectric disposed on the trace. The dielectric is patterned to form openings on the dielectric that expose second portions on the trace. The dielectric remains over the portions. The semiconductor package may have a chemical treatment disposed on the exposed openings on the trace to form the adhesion anchoring points.

A wiring substrate includes a first wiring structure and a second wiring structure. The first wiring structure includes a first insulating layer, which covers a first wiring layer, and a via wiring. A first through hole of the first insulating layer is filled with the via wiring. The second wiring structure includes a second wiring layer and a second insulating layer. The second wiring layer is formed on an upper surface of the first insulating layer and an upper end surface of the via wiring. The second wiring layer partially includes a roughened surface. The second insulating layer is stacked on the upper surface of the first insulating layer and covers the second wiring layer. The second wiring structure has a higher wiring density than the first wiring structure. The roughened surface of the second wiring layer has a smaller surface roughness than the first wiring layer.