H05K3/4647

ROBUST MULTI-LAYER WIRING ELEMENTS AND ASSEMBLIES WITH EMBEDDED MICROELECTRONIC ELEMENTS
20170018440 · 2017-01-19 ·

An interconnect element 130 can include a dielectric layer 116 having a top face 116b and a bottom face 116a remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, or both, can include a plurality of conductive traces 132, 134. A plurality of conductive protrusions 112 can extend upwardly from the plane defined by the first metal layer 102 through the dielectric layer 116. The conductive protrusions 112 can have top surfaces 126 at a first height 115 above the first metal layer 132 which may be more than 50% of a height of the dielectric layer. A plurality of conductive vias 128 can extend from the top surfaces 126 of the protrusions 112 to connect the protrusions 112 with the second metal layer.

CONDUCTIVE SUBSTRATE AND CARRIER PLATE WIRING STRUCTURE WITH FILTERING FUNCTION, AND MANUFACTURING METHOD OF SAME
20250212337 · 2025-06-26 ·

A conductive substrate with a filtering function is manufactured by a process including preparing a core layer and forming first and second conductive holes in the core layer, forming a sacrificial copper layer on the first conductive hole and on the core layer, forming a metal layer on the second conductive hole, forming a metal post in the first conductive hole, forming a lower insulating layer on the core layer, forming a lower insulative post in the second conductive hole, forming a magnet wrapping around the metal post to obtain a first conductive post, forming an upper insulating layer on the core layer, forming an upper insulative post in the second conductive hole to obtain a second conductive post, removing the upper insulating layer, the lower insulating layer, and the remaining sacrificial copper post layer, followed by flattening.

Systems and methods for manufacturing electrical components using electrochemical deposition
12359334 · 2025-07-15 · ·

A method of making an electrical component includes transmitting electrical energy from a power source through one or more deposition anodes, through an electrolyte solution, and to an intralayer electrical-connection feature of a build plate, such that material is electrochemically deposited onto the intralayer electrical-connection feature and forms an interlayer electrical-connection feature. The method also includes securing a dielectric material so that the dielectric material contacts and electrically insulates the intralayer electrical-connection feature and contacts and at least partially electrically insulates the interlayer electrical-connection feature. The method additionally includes depositing a seed layer onto the dielectric material and the interlayer electrical-connection feature, electrochemically depositing material onto the seed layer, to form at least one second intralayer electrical-connection feature of the electrical component, and removing any one or more portions of the seed layer onto which no portion of the at least one second intralayer electrical-connection feature is formed.

Composite layer circuit element

The embodiment of the disclosure provides a composite layer circuit element of an electronic device. The composite layer circuit element includes a first dielectric layer, a first circuit layer and a second dielectric layer. The first circuit layer is disposed on the first dielectric layer, and the second dielectric layer is disposed on the first circuit layer. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer in a cross section view.

SYSTEMS AND METHODS FOR MANUFACTURING ELECTRICAL COMPONENTS USING ELECTROCHEMICAL DEPOSITION
20250347023 · 2025-11-13 ·

A system for making an electrical component includes a build plate that includes an intralayer electrical-connection feature. The system additionally includes a dielectric application station that includes a stopping plate and a dielectric source. The build plate is movable relative to the stopping plate so that a gap is defined between the stopping plate and the build plate, and a size of the gap is such that a portion of an interlayer electrical-connection feature contacts the stopping plate. When the gap is defined between the stopping plate and the build plate, the dielectric application station is configured to flow a dielectric material from the dielectric source into the gap so that the dielectric material fills at least a portion of the gap from the stopping plate to the build plate, contacts and at least partially electrically insulates the intralayer electrical-connection feature, and is secured to the build plate.