A multilayer wiring board that improves the reliability of connection at a via hole connection portion, and a method for producing the multilayer wiring board. In a multilayer wiring board comprising a plurality of metal wiring layers alternately laminated with insulating layers interposed therebetween are electrically connected to each other via a via hole plated layer, wherein a dissimilar metallic layer, made from material different from that of the metal wiring layers, is interposed between each of the metal wiring layers on the bottom surface of the via hole and the via hole plated layer, and the dissimilar metallic layer interposed between the each of the metal wiring layers on the bottom surface of the via hole and the via hole plated layer is arranged in a concave shape on the surface of the concave portion formed in the metal wiring layer on the bottom surface of the via hole.

The disclosure provides a three-dimensional circuit assembly including a printed circuit board comprising a top film surface and a bottom film surface opposite to the top film surface. The three-dimensional circuit assembly may also include a first layer of a composite material bonded or laminated on the top film surface. The three-dimensional circuit assembly may further include a second layer of the composite material bonded or laminated on the bottom film surface of the printed circuit board.

Methods for forming electrical circuitries on three-dimensional (3D) structures and devices made using the methods. A method includes forming selectively shaped 3D structures using additive manufacturing. The method includes forming undercuts on upper-level pedestals of the 3D structures that effectively act as overhanging deposition masks for selectively preventing deposition of a selected material on a corresponding portions of lower levels. The method includes simultaneously forming and electrically isolating materials directionally deposited on the 3D structure.

A circuit board includes a substrate, a first circuit layer, a second circuit layer, and a third circuit layer. The substrate includes a base layer, a first metal layer formed on the base layer, and a seed layer formed on the first metal layer. The first circuit layer is located on the substrate and includes the first metal layer and a signal layer formed on a surface of the first metal layer. The second circuit layer is coupled to the first circuit layer and includes the first metal layer, the seed layer, and a connection pillar formed on a surface of the first metal layer and the seed layer. The third circuit layer is coupled to the second circuit layer and includes the seed layer and a coil formed on a surface of the seed layer.

A semiconductor device structure includes a first chip, second chip, a first metal structure, a second metal structure, a first via structure and a second via structure. The first chip includes n inter metal dielectric (IMD) layer, which includes different materials adjacent to generate a number of staggered portions having a zigzag configuration. The second chip bonded to the first chip generates a bonding interface. The first metal structure is disposed in the first chip and between the staggered portions and the bonding interface. The first via structure in the first chip stops at the first metal structure. The first via structure includes a first via metal and a first via dielectric layer. A surface roughness of the staggered portions is substantially greater than a surface roughness of the first via dielectric layer. The second via structure extends from the first via structure to the second metal structure.

A semiconductor device structure includes a first chip, second chip, a first metal structure, a second metal structure, a first via structure and a second via structure. The first chip includes n inter metal dielectric (IMD) layer, which includes different materials adjacent to generate a number of staggered portions having a zigzag configuration. The second chip bonded to the first chip generates a bonding interface. The first metal structure is disposed in the first chip and between the staggered portions and the bonding interface. The first via structure in the first chip stops at the first metal structure. The first via structure includes a first via metal and a first via dielectric layer. A surface roughness of the staggered portions is substantially greater than a surface roughness of the first via dielectric layer. The second via structure extends from the first via structure to the second metal structure.

Provided are a multilayer board and a method for manufacturing same, in which a different kind of metal layer is formed between an upper metal layer and an interlayer insulating layer, the different kind of metal layer being formed only in a wiring area without being formed in a via area. The multilayer board comprises: a substrate layer; a plurality of first metal layers sequentially stacked on the substrate layer; an interlayer insulating layer formed between two different first metal layers, having a first via hole, and electrically connecting the two different first metal layers through a third metal layer formed in the first via hole; and a second metal layer formed between the upper layer of the two different first metal layers and the interlayer insulating layer.

An electronic device includes a circuit board, a driving member, and a working member. The circuit board has a board body, conductive lines, and conductive pads. The board body has a working surface. The driving member includes a substrate, a thin film circuit, a thin film element, and connection pads. The thin film circuit corresponds to thin film element and is electrically connected to the connection pads, and the connection pads are connected to partial conductive pads. The substrate has a first top surface. The working member has at least one electrode electrically connected to one of the conductive pads. The working member has a second top surface. A first height is defined between the first top surface and the working surface, and a second height is defined between the second top surface and the working surface. The second height is greater than or equal to the first height.

Methods and structures corresponding to superconducting apparatus including superconducting layers and traces are provided. A method for forming a superconducting apparatus includes forming a first dielectric layer on a substrate by depositing a first dielectric material on the substrate and curing the first dielectric material at a first temperature. The method further includes forming a first superconducting layer comprising a first set of patterned superconducting traces on the first dielectric layer. The method further includes forming a second dielectric layer on the first superconducting layer by depositing a second dielectric material on the first superconducting layer and curing the second dielectric material at a second temperature, where the second temperature is lower than the first temperature. The method further includes forming a second superconducting layer comprising a second set of patterned superconducting traces on the second dielectric layer.

A method of manufacturing a component carrier includes providing a laminated stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, at least partially covering a component with a transition layer having a thickness in a range from 0.5 nm to 1 μm, and assembling the component with the stack.