A method of manufacturing a constituent for a component carrier is disclosed. The method includes providing an electrically conductive structure, forming a highly thermally conductive and electrically insulating or semiconductive structure on the electrically conductive structure, and subsequently, attaching a thermally conductive and electrically insulating structure, having a lower thermal conductivity than the highly thermally conductive and electrically insulating or semiconductive structure, on an exposed surface of the highly thermally conductive and electrically insulating or semiconductive structure.

A resin composition for use in a dielectric layer of a capacitor is provided that can control a decrease in capacitance or dielectric constant at high temperature and ensure high dielectric characteristics and high adhesion of the composition to a circuit. The resin composition contains a resin component containing an epoxy resin, a diamine compound, and a polyimide resin; and a dielectric filler composed of a metal oxide containing at least two elements selected from the group consisting of Ba, Ti, Sr, Pb, Zr, La, Ta, and Bi. The content of the dielectric filler is 60 to 85 parts by weight on the basis of 100 parts by weight of solid content in the resin composition.

An object is to provide, for example, a method for manufacturing a film-forming substrate that can sufficiently improve both bleeding of a resin composition and adhesion between the resin composition and a metal substrate surface. For example, provided is a method for manufacturing a film-forming substrate having a film of a resin composition formed on a metal substrate surface, the method including: an etching step of etching a metal substrate surface with a micro-etching agent; a surface treatment step of bringing the etched metal substrate surface into contact with a surface treatment agent to perform a surface treatment such that a contact angle of water on the surface is 50 or more and 150 or less; and a film forming step of forming a film of a resin composition on the surface-treated metal substrate surface by an inkjet method.

A membrane circuit board includes a first flexible circuit board, a second flexible circuit board and a nanomaterial layer. The nanomaterial layer includes plural polymeric structures. The nanomaterial layer is formed on the first flexible circuit board, the second flexible circuit board and/or a junction region between the edge of the first flexible circuit board and the second flexible circuit board to prevent at least one of the upper metallic conductor line and the lower metallic conductor line from contacting with a specified chemical element. Consequently, the conductive impedance of the upper metallic conductor line and the lower metallic conductor line is not affected by the specified chemical element. Moreover, the present invention also provides a keyboard device with the membrane circuit board.

A method for repairing a printed circuit board (PCB) including the steps of presenting a PCB having an initial coating on a surface thereof, removing the initial coating from the surface of the PCB at least in an area in need of repair, and recoating at least the area of the PCB in need of repair by way of atomic layer deposition.

A membrane circuit board includes a first flexible circuit board, a second flexible circuit board and a nanomaterial layer. The nanomaterial layer includes plural polymeric structures. The nanomaterial layer is formed on the first flexible circuit board, the second flexible circuit board and/or a junction region between the edge of the first flexible circuit board and the second flexible circuit board to prevent at least one of the upper metallic conductor line and the lower metallic conductor line from contacting with a specified chemical element. Consequently, the conductive impedance of the upper metallic conductor line and the lower metallic conductor line is not affected by the specified chemical element. Moreover, the present invention also provides a keyboard device with the membrane circuit board.

A carrier structure including a glass substrate, a buffer layer, and an inner circuit layer is provided. The glass substrate has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating through the glass substrate. The buffer layer is disposed on the first surface and the second surface of the glass substrate. The inner circuit layer is disposed on the buffer layer and in the through hole of the glass substrate. The inner circuit layer exposes a part of the buffer layer.

A carrier structure including a glass substrate, a buffer layer, and an inner circuit layer is provided. The glass substrate has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating through the glass substrate. The buffer layer is disposed on the first surface and the second surface of the glass substrate. The inner circuit layer is disposed on the buffer layer and in the through hole of the glass substrate. The inner circuit layer exposes a part of the buffer layer.

An electronic device and manufacturing method thereof are disclosed. The manufacturing method of the electronic device comprises following steps: forming at least a thin-film conductive line on the substrate by a thin-film process; forming at least an electrical connection pad on the substrate by a printing process, wherein the electrical connection pad is electrically connected with the thin-film conductive line; and disposing at least an electronic element on the substrate, wherein the electronic element is electrically connected with the thin-film conductive line through the electrical connection pad. The electronic device has a lower manufacturing cost and a higher component configuration density, and the production yield and reliability of the electronic device are improved by the configuration of the electrical connection pad.

Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.