An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

The invention provides an IG unit comprising two panes and a between-pane space located between the two panes. A desired surface of a selected one of the two panes bears a coating comprising both a transparent conductive oxide film, and an overcoat film located over the transparent conductive oxide film. The IG unit further comprises a bus bar and a transparent conductor bridge each located over the desired surface. The bus bar is spaced apart from the coating and is connected electrically to the transparent conductive oxide film by virtue of the transparent conductor bridge extending from the bus bar to a top surface of the overcoat film. In some embodiments, the IG unit further comprises a frit located over the desired surface and extending around a perimeter thereof. The bus bar is located over the frit. Certain embodiments provide a refrigerator having a door comprising such an IG unit.

A conductor includes (i) a substrate, (ii) a transparent conductive film formed on the substrate and including a silver nanowire, (iii) a metal film formed over the transparent conductive film such that at least a portion thereof overlaps the transparent conductive film, and (iv) a buffer film provided between the transparent conductive film and the metal film, the buffer film having adhesion to each of the transparent conductive film and the metal film, and not impeding conductivity between the transparent conductive film and the metal film. Preferably, the buffer film is formed of an organic material having respective functional groups capable of bonding to the transparent conductive film and the metal film.

A structure may include a first material, a second material joined to the first material at a junction between the first and second materials, and one or more media extending across the junction to form a continuous interconnect between the first and second materials, wherein the first and second materials are heterogeneous. The structure may further include a transition at the junction between the first and second materials. The one or more media may include a functional material which may be electrically conductive. The structure may further include a third material joined to the second material at a second junction between the second and third materials, the media may extend across the second junction to form a continuous interconnect between the first, second, and third materials, and the second and third materials may be heterogeneous.

A patterning process for forming a double-sided electrode structure includes: providing a substrate having two opposite surfaces, wherein a first photo-sensitive layer and a second photo-sensitive layer are respectively formed on the opposite surfaces; forming a first metal nanowire layer on the first photo-sensitive layer and a second metal nanowire layer on the second photo-sensitive layer; and performing a double-sided lithography process. The lithography process includes: performing an exposure process to define a removing area and a remaining area on both of the first and the second photo-sensitive layers; and removing the first and second photo-sensitive layers and the first and second metal nanowire layers in the defined removing areas by a developer solution, thereby patterning the first and second metal nanowire layers.

A glass structure includes a glass substrate, a first sensing layer, a second sensing layer, a signal wire layer and an insulative layer. Each of the two sensing layers is formed by a metal oxide conductive film electrically connected onto a metal mesh and has sensing columns and isolation columns which insulatively separate the sensing columns. An end of each of the sensing columns is provided with a contact connected to the signal wire layer. Conductive material of each isolation column is divided into disconnected insulative areas. The insulative layer is adhesively disposed between the first and second sensing layers. The sensing columns of the first sensing layers are orthogonal to the second sensing columns on the second sensing layer to constitute a capacitive sensing unit array.

The present invention is a resin composition characterized by being able to undergo elastic deformation, having little residual strain rate and exhibiting stress relaxation properties. More specifically, the present invention relates to a resin composition wherein the stress relaxation rate (R) and the residual strain rate (), as measured in a prescribed extension-restoration test, are as follows: 20%R95% and 0%3%.

A capacitance sensor, comprising: a plurality of first electrically conductive lines, wherein at least one side of two adjacent ones of the first electrically conductive lines respectively has a notch and the notches are opposite to each other; a second electrically conductive line, crossed with the first electrically conductive lines, wherein the second electrically conductive line further comprises a second protruding part protruding from the second electrically conductive line; wherein the second protruding part is located between the notches; wherein a distance between the two adjacent ones of the first electrically conductive lines at the side is larger than or equal to a maximum distance between the notches. Such capacitance sensor can provide sufficient capacitance value variation even at an edge region.

Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.

Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.