Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

The disclosure relates to a metal nanowire structure. The metal nanowire structure includes a substrate and a metal nanowire film located on the substrate. The metal nanowire film includes a number of first metal nanowires parallel with and spaced from each other. A width of each of the plurality of first metal nanowires is in a range from about 0.5 nanometers to about 50 nanometers. Each of the plurality of first metal nanowires is a solid structure and consists of metal material.

A transparent conductive film comprises a transparent substrate and a metal wiring portion formed thereon. A thin metal wire contained in an electrode portion in the metal wiring portion has a surface shape satisfying the condition of Ra.sup.2/Sm>0.01 m and has a metal volume content of 35% or more. Ra represents an arithmetic average roughness in micrometers and is equal to or smaller than the thickness of a metal wiring located in a position where the surface roughness is measured. Sm represents an average distance between convex portions and is 0.01 m or more.

A flexible printed circuit board according to an embodiment of the present invention includes at least one insulating layer having flexibility and containing a synthetic resin as a main component; and at least one conducting layer including a circuit pattern, wherein the circuit pattern includes a continuous spiral pattern, and the flexible printed circuit board includes a curved portion that curves such that one side and another side of the spiral pattern are disposed close to each other.

The disclosure relates to a metal nanowire film. The metal nanowire film includes a substrate and a number of first metal nanowire bundles located on the substrate. The number of first metal nanowire bundles are parallel with and spaced from each other. Each of the number of first metal nanowire bundles includes a number of first metal nanowires parallel with each other. The first distance between adjacent two of the number of first metal nanowires is less than the second distance between adjacent two of the number of first metal nanowire bundles.

A component carrier includes a stack having at least one horizontal electrically conductive layer structure, at least one electrically insulating layer structure, a semiconductor component embedded in the stack, and at least one vertical via being laterally offset from the semiconductor component. The at least one horizontal electrically conductive layer structure electrically connects the vertical via to a bottom main surface of the semiconductor component. The component carrier is configured for a current flow from the vertical via to the horizontal electrically conductive layer structure, from the horizontal electrically conductive layer structure to the bottom main surface of the semiconductor component, from the bottom main surface of the semiconductor component to an upper main surface of the semiconductor component, and from the upper surface of the semiconductor component to the outside of the component carrier.

The present disclosure provides an elastic interposer including a flexible substrate and a conductive device. The flexible substrate includes multiple circuits, of which first terminals are exposed on a first surface of the flexible substrate and show a first pattern, and of which second terminals are exposed on a second surface of the flexible substrate and show a second pattern different from the first pattern. The conductive device includes a first flexible conductive element and a second flexible conductive element. The first flexible conductive element is disposed on the first surface of the flexible substrate, and includes multiple first elastic conductive portions electrically connected to the first terminals of the circuits. The second flexible conductive element is disposed on the second surface of the flexible substrate, and includes multiple second elastic conductive portions electrically connected to the second terminals of the circuits.

A method of forming a stacked wiring includes forming a first adhesion layer on a substrate, forming a first wiring on the first adhesion layer, etching the first adhesion layer and the first wiring by the same first wet etching so that the first wiring is in a reverse trapezoid shape in which a first width of a top surface is larger than a second width of a bottom surface contacting the first adhesion layer as a cross-section in a direction intersecting with a first wiring extending direction, covering the top surface and a side surface of the first wiring with a second adhesion layer, forming a second wiring on the second adhesion layer, and etching the second adhesion layer and the second wiring by the same second wet etching so that the second adhesion layer and the second wiring remain on only the top surface of the first wiring.

The disclosure relates to a method for making a metal nanowire film. The method includes applying a metal layer on a substrate; placing a carbon nanotube composite structure on the metal layer, wherein the carbon nanotube composite structure defines a number of openings and parts of the metal layer are exposed by the number of openings; dry etching the metal layer using the carbon nanotube composite structure as a mask; and removing the carbon nanotube composite structure. The carbon nanotube composite structure includes a carbon nanotube structure and a protective layer coated on the carbon nanotube structure. The carbon nanotube structure includes a number of carbon nanotubes arranged substantially along the same direction.

A microelectromechanical system (MEMS) film for a test socket is arranged between a semiconductor device and a test apparatus for performing an electrical test of the semiconductor device and includes a flexible bare film and a plurality of round-type MEMS bumps on the bare film, each of the MEMS bumps being formed on the bare film by using a MEMS processing technique, having an electrical contact with an electrode pad of the test apparatus or a conductive ball of the semiconductor device, and having a contact surface rounded from an edge side toward a center side in a convex manner in a direction toward the electrode pad or the conductive ball.