In an embodiment, a smart connector includes an Application Specific Electronics Packaging (ASEP) device formed by an ASEP manufacturing process, and a separate printed circuit board electrically connected to electrical components of the ASEP device. The ASEP manufacturing process includes forming a continuous carrier web having a plurality of lead frames, overmolding a substrate onto the fingers of each lead frame, each substrate having a plurality of openings which exposes a portion of the fingers, electroplating the traces, and electrically attaching at least one electrical component to the traces to form a plurality of ASEP devices. In some embodiments, the printed circuit board has electrical components configured to control the functionality of the electrical components. In some embodiments, the printed circuit board has electrical components configured to modify properties of the smart connector.

An electricity storage unit includes: an electricity storage device; a circuit portion on which an electronic component is mounted; a heat dissipation member that dissipates heat from the circuit portion; and a holding member that holds the electricity storage device in a state where the electricity storage device, the circuit portion, and the heat dissipation member are stacked, wherein the holding member is provided with a supporting portion that supports the electricity storage device and abuts against the heat dissipation member.

The power conversion device includes: a housing; an electric wiring board stored in the housing; a first heat generating component provided on the one surface of the electric wiring board; a second heat generating component which has a lower heat generation density than the first heat generating component and of which a protruding height from the electric wiring board is equal to or smaller than a protruding height of the first heat generating component, the second heat generating component being provided on the one surface of the electric wiring board; and a third heat generating component which has a lower heat generation density than the first heat generating component and of which a protruding height from the electric wiring board is greater than the protruding height of the first heat generating component, the third heat generating component being provided on another surface of the electric wiring board.

The present invention provides a heat dissipating structure with high heat dissipation performance while reducing the electric resistance. A heat dissipating structure includes: a heat sink having a base portion, and a plurality of heat dissipating fins provided upright on a first surface of the base portion; a first heat generating component provided on a side of the first surface of the base portion while being in contact with at least one heat dissipating fin of the plurality of heat dissipating fins; a circuit board joined to a second surface, opposite to the first face, of the base portion while being electrically connected to the first heat generating component; a second heat generating component provided on the circuit board, the second heat generating component generating a smaller amount of heat than the first heat generating component; and a connector electrically connecting the first heat generating component and the second heat generating component. The connector has a first outlet into which a first connecting terminal on a side of the first heat generating component is insertable, and a second outlet into which a second connecting terminal on a side of the second heat generating component is insertable.

A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

An electronic device has a control board having a plurality of wiring layers, a metal-made housing supporting the control board, and a fixing screw for fixing the control board to the housing through a washer. The control board includes a through hole penetrating from a third surface to a fourth surface, a through electrode formed inside the through hole, and a power system GND pattern formed on any wiring layer of the wiring layers. The power system GND pattern and the housing are electrically coupled through the through electrode, the washer, and the fixing screw.

A printed wiring board according to an embodiment includes a metal plate and a wiring member. The meal plate includes a current path part, which is a main current path of an electronic part mounted on or above a front surface of the metal plate, and a heat radiation part, which radiates heat generated from the electronic part. The wiring member is arranged on or above a back surface of the metal plate. The current path part and the heat radiation part are in the same layer to be integrally formed with the wiring member.

The disclosure provides a power supply including a high heat-dissipation circuit board assembly system in which a rack is installed on a circuit board so as to be connected to a transformer. Heat produced when electronic components installed on the circuit board are actuated may be conducted and dissipated thereby. The efficiency and the heat conductivity effect of the power supply may be further enhanced by distributing the amount and the flowing direction of the current from the transformer.

In a method for manufacturing a device embedded substrate, a conductive via that penetrates a first insulating layer and a second insulating layer from an outer metal layer to reach a second terminal of an IC device is formed after forming the outer metal layer.

A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cm.sup.−1 to 4,000 cm.sup.−1 indicated by I.sub.A, and a maximum value of intensity in a wavenumber range of 450 cm.sup.−1 to 550 cm.sup.−1 is indicated by I.sub.B, I.sub.A/I.sub.B is 1.1 or greater.