Depicted embodiments are directed to an Application Specific Electronics Packaging (ASEP) system, which enables the manufacture of additional products using reel to reel (68a, 68b) manufacturing processes as opposed to the batch processes used to currently manufacture electronic products and MIDs. Through certain ASEP embodiments, it is possible to integrate connectors, sensors, LEDs, thermal management, antennas, RFID devices, microprocessors, memory, impedance control, and multi-layer functionality directly into a product.

A circuit board is formed from a non-catalytic laminate coated with an optically curable catalytic adhesive, which, after curing with an optical source such as UV, has a resin rich surface with catalytic particles dispersed below a surface exclusion depth. The catalytic laminate is subjected to a drilling and blanket surface plasma etch operation to expose the catalytic particles, followed by an electroless plating operation which deposits a thin layer of conductive material on the surface. A photo-masking step follows to define circuit traces, after which an electro-plating deposition occurs, followed by a resist strip operation and a quick etch to remove electroless copper which was previously covered by photoresist.

The present invention relates to methods and systems that utilize a catalyst or thin metal film by atomic level deposition (ALD) of one or more metals that allows fine traces deposition to the trench formed in a dielectric material, thereby minimizing potential physical damage due to embedded conductor format and making the fine space between traces to prevent electromigration in the traces.

A laminate comprising a substrate; and a plating-forming layer disposed on at least one surface of both surfaces of the substrate and containing a thermoplastic resin and a plating catalyst, wherein the plating-forming layer further satisfies conditions of the following (1) and/or (2), (1) the plating-forming layer contains a dispersing agent for dispersing the plating catalyst (2) an abundance of the plating catalyst on a surface side of the plating-forming layer is higher than an abundance of the plating catalyst on the substrate side of the plating-forming layer.

A method for manufacturing a wiring board in which the adhesion between an underlayer and a seed layer is improved. A diffusion layer in which an element forming the underlayer and an element forming a coating layer are mutually diffused is formed between the underlayer and a wiring portion of the coating layer by irradiating the wiring portion with a laser beam. A seed layer is formed by removing a portion excluding the wiring portion of the coating layer from the underlayer. A metal layer is formed by disposing a solid electrolyte membrane between an anode and the seed layer and applying voltage between the anode and the underlayer. An exposed portion without the seed layer of the underlayer is removed from an insulating substrate.

Depicted embodiments are directed to an Application Specific Electronics Packaging (ASEP) system, which enables the manufacture of additional products using reel to reel (68a, 68b) manufacturing processes as opposed to the batch processes used to currently manufacture electronic products and MIDs. Through certain ASEP embodiments, it is possible to integrate connectors, sensors, LEDs, thermal management, antennas, RFID devices, microprocessors, memory, impedance control, and multi-layer functionality directly into a product.

A circuit board is formed from a catalytic laminate having a resin rich surface with catalytic particles dispersed below a surface exclusion depth. Trace channels and apertures are formed into the catalytic laminate, electroless plated with a metal such as copper, filled with a conductive paste containing metallic particles, which are then melted to form traces. In a variation, multiple circuit board layers have channels formed into the surface below the exclusion depth, apertures formed, are electroless plated, and the channels and apertures filled with metal particles. Several such catalytic laminate layers are placed together and pressed together under elevated temperature until the catalytic laminate layers laminate together and metal particles form into traces for a multi-layer circuit board.

A catalytic resin is formed by mixing a resin and either homogeneous or heterogeneous catalytic particles, the resin infused into a woven glass fabric to form an A-stage pre-preg, the A-stage pre-preg cured into a B-stage pre-preg, thereafter held in a vacuum and between pressure plates at a gel point temperature for a duration of time sufficient for the catalytic particles to migrate away from the resin rich surfaces of the pre-preg, thereby forming a C-stage pre-preg after cooling. The C-stage pre-preg subsequently has trenches formed by removing the resin rich surface, the trenches extending into the depth of the catalytic particles, optionally including drilled holes to form vias, and the C-stage pre-preg with trenches and holes placed in an electroless bath, whereby traces form in the trenches and holes where the surface of the cured pre-preg has been removed.

A catalytic resin is formed by mixing a resin and either homogeneous or heterogeneous catalytic particles, the resin infused into a woven glass fabric to form an A-stage pre-preg, the A-stage pre-preg cured into a B-stage pre-preg, thereafter held in a vacuum and between pressure plates at a gel point temperature for a duration of time sufficient for the catalytic particles to migrate away from the resin rich surfaces of the pre-preg, thereby forming a C-stage pre-preg after cooling. The C-stage pre-preg subsequently has trenches formed by removing the resin rich surface, the trenches extending into the depth of the catalytic particles, optionally including drilled holes to form vias, and the C-stage pre-preg with trenches and holes placed in an electroless bath, whereby traces form in the trenches and holes where the surface of the cured pre-preg has been removed.

The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.