A seeded substrate is first prepared. The seeded substrate includes an insulation substrate having a main surface composed of a first region and a second region other than the first region, and a conductive seed layer provided on the first region. Subsequently, a conductive layer is formed on at least the second region to obtain a first treated substrate. An insulation layer is then formed on the first treated substrate. The seed layer is then exposed. A metal layer is then formed on the surface of the seed layer. Here, a voltage is applied between the anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing solution being disposed between the second treated substrate and the anode, and the solid electrolyte membrane and the seed layer being pressed into contact with each other. Thereafter, the insulation layer and the conductive layer are removed.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first substrate, a second substrate, and a solid solution layer. The first substrate includes a first metal layer, and the first metal layer includes a first metal. The second substrate includes a second metal layer. The solid solution layer electrically connects the first metal layer to the second metal layer. The solid solution layer includes a first metal-rich layer.

A method for manufacturing a printed circuit board includes forming a through hole in an insulating layer of the printed circuit board, filling the through hole by plating to form a plating layer on the insulating layer, and removing the plating layer from the insulating layer; and forming a circuit pattern on the insulating layer.

A flexible printed circuit board includes: a base film having a hole for forming a through hole; and a coil-shaped wiring layer layered on at least one surface side of the base film, wherein the wiring layer includes a land portion arranged at an inner peripheral surface of the hole and at a peripheral portion of the hole of the base film, and a winding portion arranged in a spiral shape with the land portion as an inside end portion or an outside end portion, wherein the winding portion includes a first winding portion that is an outermost circumference and a second winding portion that is inside relative to the outermost circumference, and wherein a ratio of an average thickness of the land portion to an average thickness of the second winding portion is 1.1 or more and 5 or less.

A patterned article includes a unitary polymeric layer and a plurality of electrically conductive elements embedded at least partially in the unitary polymeric layer. Each electrically conductive element includes a conductive seed layer having a top major surface and an opposite bottom major surface in direct contact with the unitary polymeric layer, and includes a metallic body disposed on the top major surface of the conductive seed layer. The metallic body has a bottom major surface and at least one sidewall. The bottom major surface contacts the conductive seed layer. Each sidewall is in direct contact with the unitary polymeric layer and extends from the bottom major surface of the metallic body toward or to, but not past, a top major surface of the unitary polymeric layer. The conductive elements may be electrically isolated from one another. Processes for making the patterned article are described.

A component carrier with a stack including an electrically insulating layer structure and an electrically insulating structure has a tapering blind hole formed in the stack and an electrically conductive plating layer extending along at least part of a horizontal surface of the stack outside of the blind hole and along at least part of a surface of the blind hole. A minimum thickness of the plating layer at a bottom of the blind hole is at least 8 μm. A demarcation surface of the plating layer in the blind hole and facing away from the stack extends laterally outwardly from the bottom of the blind hole towards a lateral indentation and extends laterally inwardly from the indentation up to an outer end of the blind hole. An electrically conductive structure fills at least part of a volume between the plating layer and an exterior of the blind hole.

This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

A quantum computing system can include one or more classical processors. The quantum computing system can include quantum hardware including one or more qubits. The quantum computing system can include a chamber mount configured to support the quantum hardware. The quantum computing system can include a vacuum chamber configured to receive the chamber mount and dispose the quantum hardware in a vacuum. The vacuum chamber can form a cooling gradient from an end of the vacuum chamber to the quantum hardware. The quantum computing system can include a plurality of flex circuit boards including one or more signal lines. Each of the plurality of flex circuit boards can be configured to transmit signals by the one or more signal lines through the vacuum chamber to couple the one or more classical processors to the quantum hardware.

A laminated circuit assembly for filtering signals in one or more signal lines in, for instance, a quantum computing system is provided. In one example, the laminated circuit assembly includes one or more signal lines disposed within a substrate in a first direction. The laminated circuit assembly includes a dielectric portion of the substrate. The laminated circuit assembly includes a filter portion of the substrate extending in a first direction and containing a frequency absorbent material providing less attenuation to a first signal of a first frequency than to a second signal of a second, higher frequency. The filter portion is configured to attenuate infrared signals passing through the one or more signal lines.