A semiconductor structure includes a plurality memory group provided in rows, each of the memory groups includes a plurality of memories arranged at intervals along a row direction, and for two adjacent ones of the memory groups, the memories in one memory group and the memories in another memory group are staggered.

A method for forming a semiconductor structure includes the following: a substrate is provided, the substrate including a first area and a second area arranged in sequence in a second direction and T-shaped active pillars located in the first area and the second area and arranged in an array in a first direction and a third direction, the first, second and third directions being perpendicular to one another, and the first and second directions being parallel to a surface of the substrate; T-shaped gate structures located on surfaces of the T-shaped active pillars and bit line structures extending in the third direction are formed in the first area, a plurality of T-shaped gate structures located in the first direction being interconnected; and capacitor structures extending in the second direction is formed in the second area, the bit line structures and the capacitor structures being connected to the T-shaped gate structures.

A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.

A method for forming a semiconductor device includes: providing a substrate and a stacked structure covering the substrate and including alternately stacked dielectric layers and sacrificial layers; forming multiple isolation layers extending in a first direction and arranged in a second direction in the stacked structure, the first direction being perpendicular to the substrate surface and the second direction being perpendicular to the first direction; forming a bit line between two adjacent ones of the isolation layers and removing the sacrificial layers; forming capacitor via holes along a third direction at vacancies of the dielectric structure formed after removing the sacrificial layers, the third, first and second directions being perpendicular; forming transistors and capacitors sequentially in the capacitor via holes based on bit lines, the capacitors being parallel to the substrate surface; and forming a word line extending in the second direction between two adjacent ones of the transistors.

A memory device includes a substrate, an active layer that is spaced apart from the substrate and laterally oriented, a word line that is laterally oriented in parallel to the active layer along one side of the active layer, an active body that is vertically oriented by penetrating through the active layer, a bit line that is vertically oriented by penetrating through the active layer to be spaced apart from one side of the active body, and a capacitor that is vertically oriented by penetrating through the active layer to be spaced apart from another side of the active body.

Provide is a method for manufacturing a semiconductor structure, a semiconductor structure, and a semiconductor memory. The method includes the following operations. A substrate is provided. Multiple silicon pillars are formed in the substrate, and extend along a first direction. In the first direction, each of the silicon pillars includes a first portion and a second portion. An insulating layer is formed in the second portion of the silicon pillar. A conductive layer is formed in the first portion of the silicon pillar. A capacitor layer is formed on surfaces of the insulating layer and the conductive layer of the silicon pillar.

The present application provides a method for fabricating a semiconductor device including providing a substrate, concurrently forming a first conductive line and a bottom contact on the substrate, concurrently forming a first conductive line spacer on a sidewall of the first conductive line and a bottom contact spacer on a sidewall of the bottom contact, forming a first insulating layer over the substrate and concurrently forming an air gap between the first conductive line spacer and the bottom contact spacer.

A semiconductor memory device, including a first semiconductor pattern, and a second semiconductor pattern separated from the first semiconductor pattern in a vertical direction; a first bit line electrically connected to a first source/drain region of the first semiconductor pattern, and a second bit line electrically connected to a first source/drain region of the second semiconductor pattern; a word line structure in contact with the first semiconductor pattern and the second semiconductor pattern; and a first data storage element electrically connected to a second source/drain region of the first semiconductor pattern, and a second data storage element electrically connected to a second source/drain region of the second semiconductor pattern, wherein the first semiconductor pattern and the second semiconductor pattern are monocrystalline, and wherein a crystal orientation of the first semiconductor pattern is different from a crystal orientation of the second semiconductor pattern.

A method for fabricating a semiconductor device includes: forming a stack body by alternately stacking a plurality of semiconductor layers and a plurality of sacrificial semiconductor layers over a lower structure; forming an opening by etching the stack body; forming a plurality of active layers and a plurality of lateral recesses by etching the semiconductor layers and the sacrificial semiconductor layers through the opening; forming sacrificial dielectric layers partially filling the lateral recesses and contacting the active layers; and replacing the sacrificial dielectric layers with word lines.

The present application discloses a method for fabricating a semiconductor device with a pad structure. The method includes providing a substrate, forming a capacitor structure above the substrate, forming a plurality of passivation layers above the capacitor structure, forming a pad opening in the plurality of passivation layers, performing a passivation process comprising soaking the pad opening in a precursor, and forming a pad structure in the pad opening. The precursor is dimethylaminotrimethylsilane or tetramethylsilane. Forming the pad structure in the pad opening comprises forming a pad bottom conductive layer comprising nickel in the pad opening and forming a pad top conductive layer on the pad bottom conductive layer. The pad top conductive layer comprises palladium, cobalt, or a combination thereof.