Embodiments of the present invention provide a method for manufacturing a semiconductor structure, which includes: a base is provided and a stack layer is formed on the base, wherein the stack layer includes at least a first sacrificial layer, and a material of the first sacrificial layer includes an amorphous elemental semiconductor material; second hard mask patterns are formed on the first sacrificial layer through a self-aligned process; a doping process is performed, which includes the operation that a region of the first sacrificial layer exposed from gaps between the second hard mask patterns is doped; the second hard mask patterns are removed; and an undoped region of the first sacrificial layer is removed through a selective etching process so as to form first sacrificial patterns.

Embodiments of the disclosure provide a semiconductor substrate, a method for forming same, and a layout structure. The method includes: providing a semiconductor structure including a first region and a second region arranged in sequence along a second direction, the second region including active structures arranged in an array along a first direction and a third direction, each of the active structure at least including a channel structure, the first direction, the second direction, and the third direction being perpendicular to each other, and the first direction and the second direction being parallel to a surface of the semiconductor substrate; forming a gate structure on a surface of the channel structure; and forming a word line structure extending in the first direction on the first region. The word line structure is connected with the gate structure located on the same layer.

A semiconductor structure includes: a substrate; bit lines located in the substrate and including a main body and a plurality of contact portions, the main body extending in a first direction, the contact portions being connected to the main body and extending toward the top surface of the substrate, and the plurality of contact portions being arranged at intervals in the first direction; and transistors located on a top surface of the contact portion, the extension direction of a channel of the transistor being perpendicular to a plane where the substrate is located.

A semiconductor structure includes a substrate and a plurality of word lines located on a top surface of the substrate. Each of the word lines extends in a direction perpendicular to the top surface of the substrate. The plurality of word lines are arranged at intervals along a first direction. Any two adjacent ones of the word lines are arranged in an at least partially staggered manner along the first direction. The first direction is a direction parallel to the top surface of the substrate.

Provided are a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a base; a bit line; and a semiconductor channel including a first doped region, a channel region, and a second doped region that are sequentially arranged, where the first doped region contacts the bit line, and the first doped region, the channel region, and the second doped region are doped with first-type doped ions. The channel region is further doped with second-type doped ions, enabling a concentration of majority carriers in the channel region to be less than a concentration of majority carriers in the first doped region and a concentration of majority carriers in the second doped region. The first-type doped ions are one of N-type ions or P-type ions, and the second-type doped ions are the other of N-type ions or P-type ions.

A semiconductor structure includes a base in which a first doped region is provided and an active pillar group arranged in the first doped region. The active pillar group includes four active pillars arranged in an array. At least one of the active pillars is provided with a notch, which faces at least one of a row centerline or a column centerline of the active pillar group.

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The method for manufacturing the semiconductor structure includes: a substrate is provided: a plurality of semiconductor channels arrayed in a first direction and a second direction are formed on the substrate: a plurality of bit lines extending in the first direction are formed, in which the bit lines is located in the substrate: and a plurality of word lines extending in the second direction are formed, in which two word lines adjacent to each other in the first direction are spaced apart from each other in a direction perpendicular to a surface of the substrate: and a sidewall conductive layer is formed, in which the sidewall conductive layer is located above one of the two word lines adjacent to each other, and is arranged in the same layer as the other of the two word lines.

A semiconductor device includes a substrate having one or more inner surfaces defining trenches that define an active pattern of the substrate, the trenches including a first trench and a second trench which have different widths, a device isolation layer on the substrate such that the device isolation layer at least partially fills the trenches, and a word line intersecting the active pattern. The device isolation layer includes a first isolation pattern covering a portion of the second trench, a second isolation pattern on the first isolation pattern and covering a remaining portion of the second trench, and a filling pattern filling the first trench under the word line. A top surface of the second isolation pattern is located at a higher level than a top surface of the filling pattern.

A semiconductor device and a formation method thereof are provided. The semiconductor device includes: a semiconductor substrate, where a plurality of columnar active areas are formed on the semiconductor substrate, the plurality of columnar active areas are spaced apart by a plurality of first trenches extending along a first direction and a plurality of second trenches extending along a second direction; a plurality of third trenches positioned in the semiconductor substrate at bottoms of the second trenches, where the third trenches are recessed to bottoms of the columnar active areas, and a bottom surface of a given one of the third trenches is higher than a bottom surface of the given first trench; and a plurality of metal silicide bit lines extending along the first direction in the semiconductor substrate positioned at the bottoms of the plurality of third trenches and the bottoms of the plurality of columnar active areas.

Apparatuses and methods for manufacturing semiconductor memory devices are described. An example method includes: forming a conductive layer and sputtering the conductive layer with gas. The conductive layer includes a first portion having a top surface having a first height; and a second portion having a top surface having a second height lower than the first height. Sputtering the conductive layer with gas may be performed to remove the first portion of the conductive layer and increase the second height of the second portion of the conductive layer concurrently.