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H
ELECTRICITY
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H10
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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H10B
ELECTRONIC MEMORY DEVICES
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43/00
EEPROM devices comprising charge-trapping gate insulators
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H10B43/20
characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
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H10B43/23
with source and drain on different levels, e.g. with sloping channels
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H10B43/27
the channels comprising vertical portions, e.g. U-shaped channels
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