Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

An object of the present invention is to provide an organic thin film transistor having excellent atmospheric stability. Another object of the present invention is to provide a polymer, a composition, an organic semiconductor film, and a compound.

The organic thin film transistor of the present invention has an organic semiconductor film which includes a polymer having a partial structure represented by Formula (1).

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In Formula (1), X.sup.1 represents a sulfur atom or a selenium atom, X.sup.2 to X.sup.4 each independently represent a sulfur atom, an oxygen atom, or a selenium atom, Y.sup.1 to Y.sup.4 each independently represent a group represented by —CR.sup.1═ or a nitrogen atom, where at least one of Y.sup.1 to Y.sup.4 represents a nitrogen atom, R.sup.1 represents a hydrogen atom or a substituent, and * represents a bonding position.

The inventive concept relates to a three-dimensional crosslinker composition and a method of manufacturing an electronic device using the same. According to the inventive concept, the three-dimensional crosslinker composition may be represented by Formula 1 below.

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We disclose herein a hetero-structure comprising: a curved material; at least one layer of a first material rolled around the curved material; at least one intermediate layer rolled on the at least one layer of the first material; and at least one layer of a second material rolled around the at least one intermediate layer.

There is provided an organic light-emitting diode drive circuit comprising a switch transistor (T.sub.1), a drive transistor (T.sub.2), a storage capacitor (C), and an organic light-emitting diode (OLED), wherein the switch transistor (T.sub.1) uses an inorganic semiconductor transistor, and the drive transistor (T.sub.2) uses an organic semiconductor transistor. A display screen adopting the drive circuit as a unit pixel has the property of uniform brightness. In addition, there is provided a method of fabricating the drive circuit and a display device using the drive circuit.

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

A gate insulation film composed of a polymer compound containing at least one repeating unit selected from the group consisting of a repeating unit of formula (2) and a repeating unit of formula (3); a repeating unit of formula (4) and a repeating unit of formula (1), or composed of a composition containing the polymer compound, wherein the molar ratio of the repeating unit of formula (4) to the sum of the repeating unit of formula (2) and the repeating unit of formula (3) is 50/100 to 200/100 with the total charging amount (molar quantity) of the repeating unit of formula (2) and the repeating unit of formula (3) being 100 and the content of the repeating unit of the following formula (1) is 75% by mol or more with the total content of all repeating units in the polymer compound being 100% by mol.

Electrical device including a substrate having a surface and a radiofrequency field effect transistor (RF-FET) on the substrate surface. RF-FET includes a CNT layer on the substrate surface, the CNT layer including electrically conductive aligned carbon nanotubes, and pin-down anchor layers on the CNT layer. A first portion of the CNT layer, located in-between the pin-down anchor layers, is not covered by the pin-down anchor layers and is a channel region of the radiofrequency field effect transistor and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the aligned CNTs in the first portion of the CNT layer: the aligned CNTs have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-section, and at least 40 percent of the aligned CNTs are discrete from any CNTs of the CNT layer.

A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source(105) formed of a Dirac material(103) and a drain(107); a channel(102) disposed between the source(105) and the drain(107); and a source control electrode(108) disposed on the source(105) and for controlling the doping of the Dirac material(103) such that the Dirac material(103) and the channel(102) are doped in an opposite manner; and a gate(106) disposed on the channel(102) and electrically insulated from the channel(102).

An object of the present invention is to provide a film forming method for an organic semiconductor film, with which an organic semiconductor film having good uniformity and high mobility can be manufactured with good productivity. A coating liquid is prepared by dissolving an organic semiconductor material in a solvent, the coating liquid is sprayed by a spray unit, and the coating liquid is applied onto a temperature-controlled substrate while the coating liquid during the flight which has been sprayed by the spray unit is being heated, whereby problems are solved.