Patent classifications
H10K30/151
Photoelectric conversion element and photoelectric conversion module
A photoelectric conversion element including: a first electrode; a hole blocking layer; a photoelectric conversion layer; a second electrode; a third electrode; a photoelectric conversion part in which the first electrode, the hole blocking layer, the photoelectric conversion layer, and the second electrode are stacked; an electrode contact part in which the second electrode is in contact with the third electrode; and a division part dividing the photoelectric conversion part and the electrode contact part, wherein an area (S1) where the second electrode is in contact with the third electrode in the electrode contact part and an area (S2) of the photoelectric conversion part satisfy expression (1) below: 1.0×10.sup.−5≤100×(S1/S2) . . . expression (1).
PEROVSKITE SEMICONDUCTOR DEVICES
Semiconductor devices comprising: a semiconductor device comprising: a first electrode comprising conductive material, wherein the conductive material is deposited by ink deposition (for example, layered material inks such as graphene and/or graphite), or wherein the conductive material comprises CVD grown graphene or carbon nanotubes; a first charge transportation layer, wherein the first charge transportation layer is doped with the conductive material of the first electrode; an optional insulation layer; a perovskite active layer; a second charge transportation layer; and a second electrode.
Photoelectric conversion device, process cartridge, and image forming apparatus
Provided is a photoelectric conversion device including: a support; a charge-transporting layer including an organic charge-transporting material or a sensitizing dye electrode layer including an organic sensitizing dye, where the charge-transporting layer or the sensitizing dye electrode layer is disposed on the support; and a ceramic film disposed on the charge-transporting layer or the sensitizing dye electrode layer.
SOLAR CELL AND PHOTOELECTRIC CONVERSION ELEMENT
A solar cell includes a first electrode, a first electron transport layer, a second electron transport layer, a photoelectric conversion layer, and a second electrode. The first electron transport layer includes carbon and a porous electron transport material.
Multi-layered perovskites, devices, and methods of making the same
Methods are described that include contacting an alkyl ammonium metal halide film with an alkyl ammonium halide, where the alkyl ammonium metal halide film includes a first halogen and a metal, the alkyl ammonium halide includes a second halogen, such that the contacting forms an alkyl ammonium metal mixed-halide film that interfaces with the alkyl ammonium metal halide film, where the alkyl ammonium metal mixed-halide film includes the first halogen, the second halogen, and the metal.
Monolithic solar cell
A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.
Photovoltaic device and method of manufacturing the same
A photovoltaic device (1) is provided with plurality of mutually subsequent photovoltaic device cells (1A, . . . , 1F) arranged along a direction of first device axis (D1). Each pair of a photovoltaic device cell and its successor are serially arranged through an interface region (1CD), further having a bypass function, and which extends along a second axis (D2), transverse to the first axis.
Hybrid structure using graphene-carbon nanotube and perovskite solar cell using the same
Disclosed are a hybrid structure using a graphene-carbon nanotube and a perovskite solar cell using the same. The hybrid structure includes a graphene-carbon nanotube formed by laminating a second graphene coated with a polymer on an upper surface of a first graphene coated with a carbon nanotube. The perovskite solar cell includes: a substrate; a first electrode formed on the substrate and including a fluorine doped thin oxide (FTO); an electron transfer layer formed on the first electrode and including a compact-titanium oxide (c-TiO.sub.2); a mesoporous-titanium oxide (m-TiO.sub.2) formed on the electron transfer layer; a perovskite layer formed on the m-TiO.sub.2 and including a perovskite compound; and a graphene-carbon nanotube hybrid structure formed on the perovskite layer.
Alternating multi-source vapor transport deposition
Disclosed are vapor transport deposition systems and methods for alternating sequential vapor transport deposition of multi-component perovskite thin-films. The systems include multiple vaporizing sources that are mechanically or digitally controlled for high throughput deposition. Alternating sequential deposition provides faster sequential deposition, and allows for reduced material degradation due to different vapor temperatures.
HETEROJUNCTION OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.