The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

A photoelectric conversion element module (1) includes a plurality of photoelectric conversion elements (15) formed on a light-transmitting base plate (3). The photoelectric conversion elements (15) each include a transparent conductive film (4), a first charge transport layer (5), a power-generating layer (6), and a second charge transport layer (7) stacked in order from a side corresponding to the light-transmitting base plate (3). The second charge transport layer (7) is formed of a porous film that contains a carbon material. Among two of the photoelectric conversion elements (15) that are adjacent to each other, the second charge transport layer (7) of one photoelectric conversion element and the transparent conductive film (4) of the other photoelectric conversion element are electrically connected via a first conductive adhesive layer (9), a current-collecting electrode (11), and a second conductive adhesive layer (14).

A photovoltaic device having a perovskite PV cell wherein the PV device operates, for example during start-up, initially in a bias-voltage operating mode, in which a bias voltage is applied to the perovskite PV cell of the PV device. The bias voltage or the energy needed for same can advantageously be drawn from the power electronics associated with the perovskite PV cell.

Provided is a solar cell including a first electrode, a second electrode, a light-absorbing layer located between the first electrode and the second electrode, and an intermediate layer located between the light-absorbing layer and at least one electrode selected from the group consisting of the first electrode and the second electrode. The light-absorbing layer contains a perovskite compound represented by a chemical formula ASnX.sub.3 (where A is a monovalent cation and X is a halogen anion). The intermediate layer is in contact with the light-absorbing layer. The at least one electrode selected from the group consisting of the first electrode and the second electrode has light-transmissive property. The intermediate layer contains at least one selected from the group consisting of (4-(1′,5′-dihydro-1′-methyl-2′H-[5,6]fullereno-C60-Ih[1,9-c]pyrrol-2′-yl)benzoic acid) and fullerene C60.

A solar cell includes a first electrode, an intermediate layer, a photoelectric conversion layer, and a second electrode in this order. The intermediate layer contains at least one compound A selected from predefined compound group I and at least one compound B selected from predefined compound group II.

The teachings herein pertain to hole transporting compounds containing a cyclobutyl moiety, which can be made into organic hole conductors and into hole transporting material. Additionally, optoelectronic and photoelectrochemical devices comprising such hole transporting material or hole transporting compound are described, in particular photovoltaic devices, organic-inorganic perovskite films, layered photovoltaic devices, p-n heterojunctions, dye-sensitized solar cells, organic solar cells and solid-state solar cells. Notably, a fabricated perovskite solar cell module using a disclosed HTM compound exhibited a record efficiency over 19.0% with an active area of 30.24 cm.sup.2.

The present invention relates to a process for the production of a layered body (1), at least comprising the process steps: I) provision of a photoactive layer comprising a material having a perovskite type crystal structure; II) superimposing the photoactive layer at least partially with a coating composition A) comprising an electrically conductive polymer a) and an organic solvent b); III) at least partial removal of the organic solvent b) from the coating composition A) superimposed in process step II), thereby obtaining an electrically conductive layer superimposed on the photoactive layer. The present invention also relates to a layered body obtainable by this process, to dispersions, to an electronic device, to a process for the preparation of a photovoltaic device and to the photovoltaic device that is obtainable by this process.

Methods' and compositions for making coated substrates using a co-solvent method are disclosed. Embodiments of the present disclosure relate in general to methods and compositions for making thin films of organometallic halides. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at temperatures between about 10 C and 50 C. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at room temperature.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

A tertiary amine compound is provided. The tertiary amine compound is represented by the following general formula (1):

##STR00001##

where each of Ar.sub.1 and Ar.sub.2 independently represents a benzene ring having an alkyl group or an alkoxy group, an unsubstituted benzene ring, a naphthalene ring having an alkyl group or an alkoxy group, or an unsubstituted naphthalene ring.