An optical detector (110) is disclosed. The optical detector (110) comprises: an optical sensor (112), having a substrate (116) and at least one photosensitive layer setup (118) disposed thereon, the photosensitive layer setup (118) having at least one first electrode (120), at least one second electrode (130) and at least one photovoltaic material (140) sandwiched in between the first electrode (120) and the second electrode (130), wherein the photovoltaic material (140) comprises at least one organic material, wherein the first electrode (120) comprises a plurality of first electrode stripes (124) and wherein the second electrode (130) comprises a plurality of second electrode stripes (134), wherein the first electrode stripes (124) and the second electrode stripes (134) intersect such that a matrix (142) of pixels (144) is formed at intersections of the first electrode stripes (124) and the second electrode stripes (134); and at least one readout device (114), the readout device (114) comprising a plurality of electrical measurement devices (154) being connected to the second electrode stripes (134) and a switching device (160) for subsequently connecting the first electrode stripes (124) to the electrical measurement devices (154).

A solid or quasisolid state hole transport material (HTM) includes the following complex:

##STR00001##

in which M is copper (Cu), palladium (Pd), gold (Au), silver (Ag), nickel (Ni), vanadium (V) cobalt (Co); and each structure represents an at least 6,6′ disubstituted 2,2′-bipyridine, or an at least 2,9 disubstituted 1,10-phenanthroline Electronic devices, such as solar cells can include the solid or quasisolid state HTM, in which the complex is the main hole conducting compound of the HTM.

A light-emitting device includes a first electrode, a second electrode, a light-emitting layer, and a composite material layer. The first electrode and the second electrode are arranged oppositely to each other. The light-emitting layer is arranged between the first electrode and the second electrode. The composite material layer is arranged between the second electrode and the light-emitting layer. A material for forming the composite material layer includes a titanium dioxide nanoparticle and a ligand. The ligand has a structure of

##STR00001##

The ligand is bonded to the titanium dioxide nanoparticle by a sulfur anion. n is an integer of 0˜8.

The organic small molecule 4,4′,4″,4′″-(5,5-dimethoxycyclopenta-1,3-diene-1,2,3,4-tetrayl)tetrakis(N,N-bis(4-methoxyhenyl)aniline (CPDA 1), shows electrochemical properties very close to spiro-OMeTAD indicating a high compatibility with PSC systems for its use as a hole transport material (HTM). The implementation of the cyclopentadiene dimethyl acetale core helps to red shift the absorption onset of the films as well as provide a flexible spatial configuration of the molecule, which is essential for optimum film forming properties. Transient and steady state emission analysis as well as hole mobility measurements indicate that the new HTM allows a better charge extraction, transport and separation than the spiro-OMeTAD reference compound. PSCs based on the new CPDA 1 show a PCE close to 23% with lower hysteresis than its analogue. Stability studies performed under ambient, heated and humid conditions all showed that CPDA 1 is over-performing spiro-OMeTAD. Furthermore the production cost of CPDA 1 is about 10 times lower than that of spiro-OMeTAD, contributing to render PSCs more affordable.

The present invention relates to a process for producing a layer of a crystalline material, which process comprises disposing on a substrate: a first precursor compound comprising a first cation and a sacrificial anion, which first cation is a metal or metalloid cation and which sacrificial anion comprises two or more atoms; and a second precursor compound comprising a second anion and a second cation, which second cation can together with the sacrificial anion form a first volatile compound. The invention also relates to a layer of a crystalline material obtainable by a process according to the invention. The invention also provides a process for producing a semiconductor device comprising a process for producing a layer of a crystalline material according to the invention. The invention also provides a composition comprising: (a) a solvent; (b) NH.sub.4X; (c) AX; and (d) BY.sub.2 or MY.sub.4; wherein X, A, M and Y are as defined herein.

A system and method for fabricating a perovskite film is provided, the system including a substrate stage configured to rotate around its central axis at a rotation speed, a first set of evaporation units, each coupled to the side section or the bottom section of the chamber, a second set of evaporation units coupled to the bottom section, and a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The resultant perovskite film includes multiple unit layers, wherein each unit layer is formed by one rotation of the substrate stage, and the composition and thickness of the unit layer are controlled by adjusting at least the evaporation rates, the rotation speed and the horizontal cross-sectional areas.

A perovskite solar cell is provided with a perovskite material layer having a first surface and a second surface opposite to the first surface; an electron transport layer disposed on the first surface; and a gold-nickel oxide layer disposed on the second surface. Furthermore, a manufacturing method of the perovskite solar cell is disclosed with steps of providing a transparent substrate; forming a gold-nickel oxide layer on the transparent substrate; and forming a perovskite material layer on the gold-nickel oxide layer.

The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described.

A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.

The hybrid organic-inorganic perovskite-based solar cell with copper oxide as a hole transport material includes a transparent conducting film layer (12) sandwiched between a glass substrate (11) and a titanium dioxide layer (14). The transparent conducting film layer (12) can be fluorine-doped tin oxide. A lead methylammonium tri-iodide perovskite layer (16) is formed on the titanium dioxide layer (14), such that the titanium dioxide layer (14) is sandwiched between the lead methylammonium tri-iodide perovskite layer (16) and the transparent conducting film layer (12). A layer of copper oxide (Cu2O) (18), as a hole transport material, is formed on the lead methylammonium tri-iodide perovskite layer (16). The lead methylammonium tri-iodide perovskite layer (16) is sandwiched between the layer of hole transport material (18) and the titanium dioxide layer (14). A gold contact (20) is formed on the layer of hole transport material (18).