Provided are a photoelectric conversion element having a photosensitive layer including a light absorber, in which the light absorber includes a compound having a perovskite-type crystal structure including specific cations and anions, and at least some of the anions constituting the compound are organic anions represented by Formula (An) and a solar cell using this photoelectric conversion element.

R.sup.1—C(═X.sup.1)—X.sup.2  Formula (An) R.sup.1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, an aliphatic heterocyclic group, —N(R.sup.2).sub.2, —OR.sup.3, —SR.sup.4, or a halogen atom. X.sup.1 represents an O atom or a S atom. X.sup.2 represents O.sup.− or S.sup.−. R.sup.2 to R.sup.4 are specific groups. Here, in a case in which X.sup.1 is an O atom and X.sup.2 is O.sup.−, R.sup.1 is a specific group.

Methods and devices that use alkali metal chalcohalides having the chemical formula A.sub.2TeX.sub.6, wherein A is Cs or Rb and X is I or Br, to convert hard radiation, such as X-rays, gamma-rays, and/or alpha-particles, into an electric signal are provided. The devices include optoelectronic and photonic devices, such as photodetectors and photodiodes. The method includes exposing the alkali metal chalcohalide material to incident radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material. A detector is configured to measure a signal generated by the electron-hole pairs that are formed when the material is exposed to incident radiation.

Disclosed is a solar cell including a first electrode, a second electrode, and a first conversion layer disposed therebetween. The first electrode is closer to a light incident side than the second electrode. The first conversion layer is a composition-gradient perovskite. A part of the first conversion layer adjacent to the first electrode has an energy gap less than that of a part of the first conversion layer adjacent to the second electrode.

Various embodiments include an image sensor providing global electronic shutter having an integrated circuit, a first charge-extracting layer, an optically sensitive layer, and a second hole-extracting layer. In a first mode (the ‘on’ mode), electrons are extracted via the first charge-extracting layer. In a second mode (the ‘off’ mode), the extraction of holes is prevented by the first charge-extracting layer. Other embodiments are disclosed.

A photoelectric conversion element including: a first electrode having a photosensitive layer including a light absorber on a conductive support; a second electrode facing the first electrode; and a hole transport layer provided between the first and the second electrodes, in which the light absorber includes a compound having a perovskite-type crystal structure having a cation of Group 1 element of the periodic table or a cationic organic group A, a cation of a metallic atom M that is not Group 1 element of the periodic table, and an anion of an anionic atom X, and an organic solvent content per cubic millimeter of the hole transport layer is 1×10.sup.−10 to 1×10.sup.−7 mol, a solar cell using this photoelectric conversion element, and a method for manufacturing a photoelectric conversion element including a step of applying a hole-transporting material solution and drying the solution at 40° C. to 180° C.

A photovoltaic device (1) is provided with plurality of mutually subsequent photovoltaic device cells (1A, . . . , 1F) arranged along a direction of first device axis (D1). Each pair of a photovoltaic device cell and its successor are serially arranged through an interface region (1CD), further having a bypass function, and which extends along a second axis (D2), transverse to the first axis.

Disclosed is a tandem solar cell according to an aspect including: a silicon lower cell; a perovskite upper cell disposed on the silicon lower cell; and a bonding layer for bonding the silicon lower cell and the perovskite upper cell between the silicon lower cell and the perovskite upper cell, wherein the front surface portion of the silicon lower cell being in contact with the bonding layer includes a texture structure, the bonding layer includes a first transparent electrode layer formed on the sidewall of the texture structure, a buried layer filling concave portions of the texture structure on the first transparent electrode layer, and a second transparent electrode layer on top surfaces of the buried layer, the first transparent electrode layer and the texture structure.

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

The present disclosure is directed to perovskite-based solar cell device structures and compositions comprising one or more near infrared sensitive semiconducting materials. The near infrared sensitive semiconducting materials can extend the photoresponse spectra of the devices to the near infrared region, thereby improving the power conversion efficiency of the solar cell.

A perovskite material including an organic-inorganic perovskite structure of formula (I), A.sub.nMX.sub.3 (I), n being the number of cation A and an integer >4, A being a monovalent cation selected from inorganic cations Ai and/or from organic cations Ao, M being a divalent metal cation or a combination thereof, X being a halide and/or pseudohalide anion or a combination thereof, wherein at least one cation A is selected from organic cations Ao, the inorganic cations Ai are independently selected from Li.sup.+, Na.sup.+, K.sup.+, Rb.sup.+, Cs.sup.+, or Tl.sup.+ and the organic cations Ao are independently selected from ammonium (NH.sub.4.sup.+), methyl ammonium (MA) (CH.sub.3NH.sub.3.sup.+), ethyl ammonium (CH.sub.3CH.sub.2NH.sub.3).sup.+, formamidinium (FA) (CH(NH.sub.2).sub.2.sup.+), methylformamidinium (CH.sub.3C(NH.sub.2).sub.2.sup.+), guanidium (C((NH).sub.2).sub.3.sup.+), tetramethylammonium ((CH.sub.3).sub.4N.sup.+), dimethylammonium ((CH.sub.3).sub.2NH.sub.2.sup.+) or trimethylammonium ((CH.sub.3).sub.3NH.sup.+).