An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX.sub.2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX.sub.2:AX=1:n with 0<n<1; and applying a second precursor solution to the first precursor coating to convert the first precursor coating to a perovskite layer AMX.sub.3, the second precursor solution comprising AX dissolved in a second coating solvent, the first precursor solution reacting with the second precursor solution to form a perovskite layer AMX.sub.3 on the substrate, wherein A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, X is selected from at least one of F, Cl, Br or I.

The present invention relates to a semiconductor composition comprising an inorganic semiconducting material and an organic binder. The present invention further relates to an electronic device comprising a semiconducting layer consisting of such semiconductor composition.

The present invention is a photovoltaic-thermoelectric solar cell and a method of manufacturing a photovoltaic-thermoelectric solar cell. The solar cell includes a substantially transparent electrode, an organometallic photovoltaic material disposed on the transparent electrode, and a cathode disposed on the organometallic photovoltaic material. The organometallic photovoltaic material may be a porphyrin nanomaterial.

The present disclosure provides a photovoltaic device and a method for forming the photovoltaic device. The photovoltaic device comprises a first solar cell structure having a photon absorbing layer comprising an organic material having a first bandgap; and a second solar cell structure having a photon absorbing layer comprising a material that has a Perovskite structure and having a second bandgap. The first and second solar cell structures are positioned at least partially onto each other.

Polymeric photovoltaic cell (or solar cell) with an inverted structure comprising: an anode; a first anode buffer layer; an active layer comprising at least one photoactive organic polymer as the electron donor and at least one organic electron acceptor compound; a cathode buffer layer; a cathode; wherein between said first anode buffer layer and said active layer a second anode buffer layer is placed comprising a hole transporting material, said hole transporting material being obtained through a process comprising: reacting at least one heteropoly acid containing at least one transition metal belonging to group 5 or 6 of the Periodic Table of the Elements; with at least an equivalent amount of a salt or a complex of a transition metal belonging to group 5 or 6 of the Periodic Table of the Elements with an organic anion, or with an organic ligand; in the presence of at least one organic solvent selected from alcohols, ketones, esters, preferably alcohols. Said polymer photovoltaic cell (or solar cell) with an inverted structure displays high photoelectric conversion efficiency values (η), i.e. a photoelectric conversion efficiency (η) greater than or equal to 4.5%, and good open circuit voltage (Voc), short-circuit current density (Jsc) and fill factor (FF) values. Furthermore, said polymer photovoltaic cell (or solar cell) with an inverted structure is able to maintain said values over time, in particular, in terms of photoelectric conversion efficiency (η).

Through selective incorporation of high carrier mobility graphene monolayers into low cost, NIR-sensitive SiGe detector layer structures, a device combining beneficial features from both technologies can be achieved. The SiGe in such hybrid SiGe/graphene detector devices serves as the NIR absorbing layer, or as the quantum dot material in certain device iterations. The bandgap of this SiGe layer where absorption of photons and photogeneration of carriers mainly takes place may be tuned by varying the concentrations of Ge in the SixGe1-x material. This bandgap and the thickness of this layer largely impact the degree and spectral characteristics of absorption properties, and thus the quantum efficiency or responsivity of the device. The main function and utility of the graphene monolayers, which are nearly transparent to incident light, is to facilitate the extraction and transport of electron and hole carriers from the SiGe absorbing layer through the device.

An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker/linkers. A method for producing said plasmonic solar cell by self-assembly.

An organic solar cell having a structure including a dual layer type charge transport layer, which has an ultraviolet blocking layer, is provided. The organic solar cell has a dual layer charge transport layer by including a photostable charge transport layer on one surface or both surfaces of a photoactive layer, thereby having enhanced charge transport capability within the solar cell, improved photostability without an external protection film, and excellent durability. In addition, a method for manufacturing an organic solar cell is provided which forms a photostability charge transport layer on one surface or both surfaces of a photoactive layer, thereby manufacturing a solar cell, which can be stable when exposed to ultraviolet light during electrode formation and has a highly efficient and photostability-enhanced structure in a manufacturing process without a step of attaching a protection glass and a protection film.