A visibly transparent photovoltaic device includes a visibly transparent substrate, a first visibly transparent electrode on the visibly transparent substrate, a second electrode, a visibly transparent photoactive layer between the first visibly transparent electrode and the second electrode and configured to convert at least one of near-infrared light or ultraviolet light into photocurrent, and a near-infrared absorbing material layer configured to absorb the near-infrared light and transmit visible light.

A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO.sub.2 is greater than 15 mol % but less than or equal to 95 mol %.

The present specification relates to an organic-inorganic hybrid solar cell including a first electrode, a first light absorbing layer provided on the first electrode, a second light absorbing layer provided on the first light absorbing layer, and a second electrode provided on the second light absorbing layer, in which the first light absorbing layer and the second light absorbing layer have different phase transition temperatures.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

A photovoltaic device comprises plural layers separated into plural cells, each comprising a region of a photoactive layer and electrodes on opposite sides thereof. Each of the regions of the photoactive layer are formed comprising a first part that comprises photoactive material and a second part that is not photoactive and that has a greater transmittance of visible light than the light absorbing photoactive material, in pre-selected locations, or in a pre-selected distribution of locations, across the region of the photoactive layer. One of the first and second parts are located in plural separate areas within the other of the first and second parts. The transparency of the photovoltaic device is increased by the transmission of light through the second part that is not photoactive.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Described herein is a liquid electrophotographic photovoltaic ink composition comprising: a dispersion of a material with a perovskite structure, a thermoplastic resin and conductive particles in a carrier liquid; wherein the material with a perovskite structure has a chemical formula selected from ABX.sub.3 and A.sub.2BX.sub.6; wherein A is a cation, B is a cation and X is an anion; and wherein the thermoplastic resin comprises: a copolymer of an alkylene monomer and a monomer having acidic side groups; and/or a copolymer of an alkylene monomer and an ethylenically unsaturated monomer comprising an epoxide; and/or a copolymer of an alkylene monomer, an ethylenically unsaturated monomer comprising an epoxide, and a monomer selected from a monomer having acidic side groups, a monomer having ester side groups and a mixture thereof. Also described is a method of producing a photovoltaic cell using the LEP ink and the printed cell produced by the method.

The present invention relates to a novel cathode buffer layer material, and an organic or organic/inorganic hybrid photoelectric device comprising same, and, if a novel compound of the present invention is applied to a cathode buffer layer of an organic photoelectric device such as organic solar cells, organic photodiode, colloidal quantum dot solar cell, and perovskite solar cell, a surface property of an electron transfer layer is improved via a high dipole moment of the novel compound, an electron can be easily extracted from a photoactive layer to a cathode electrode, and series resistance and leakage current can be reduced, thereby having a useful industrial effect, as performance of the organic or organic/inorganic hybrid photoelectric device being manufactured, such as an organic solar cell, organic photodiode, colloidal quantum dot solar cell, and perovskite solar cell, can be significantly improved.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

A solar cell 100 includes a substrate 1, a first electrode 6, a carrier transport layer, such as a hole transport layer 5, a first photoelectric conversion layer 3, and a coating layer 4. The first photoelectric conversion layer is disposed between the first electrode 6 and the substrate 1. The substrate 1 has a first main surface and a second main surface, and the second main surface has an uneven structure. The first photoelectric conversion layer 3 has a first main surface and a second main surface, and the first main surface and the second main surface each have an uneven structure. The coating layer 4 has a first main surface and a second main surface, and the first main surface and the second main surface each have an uneven structure.