A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1 + n2 + n3 may equal 1.

A sensing film includes a base layer, a piezoelectric layer formed on the base layer, and a first electrode and a second electrode formed on the piezoelectric layer. The first and second electrodes are spaced apart and electrically insulated from each other. The first electrode includes a first connecting portion and a number of first extending portions coupled to the first connecting portion. The second electrode includes a second connecting portion and a number of second extending portions coupled to the second connecting portion. The first connecting portion and the second connecting portion are spaced apart and face each other. The first extending portions extend from a side of the first connecting portion toward the second connecting portion. The second extending portions extend from a side of the second connecting portion toward the first connecting portion. The first extending portions and the second extending portions are alternately arranged.

A method of manufacturing a transparent conductive film comprising preparing a substrate; and forming a thin film comprising—a compound of Chemical Formula 1 on the substrate:
Ba.sub.pLa.sub.qSn.sub.mO.sub.n  Formula 1
wherein p, q, m and n are atomic content ratios, p, m and n each are independently more than 0 and less than or equal to 6, and q is 0 or 1, wherein the forming of the thin film is performed by an RF sputtering process at a temperature of 250° C. or lower.

A laminate which allows to obtain an organic thin-film solar cell having excellent output characteristics and transparency is provided. The laminate as above has a titanium oxide layer that is disposed on the member serving as a light-transmissive electrode layer and serves as an electron transport layer. The titanium oxide layer has a thickness of not less than 1.0 nm and not more than 200.0 nm. The titanium oxide layer contains indium oxide and metallic indium, InOx/Ti is not less than 0.50 and not more than 20.00 in atomic ratio, and InM/Ti is less than 0.100 in atomic ratio, where an elemental titanium content is represented by Ti, an indium oxide content is represented by InOx, and a metallic indium content is represented by InM.

An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

Provided is a laminate with which an organic thin-film solar cell having excellent output characteristics, even in an LED light irradiation environment, can be obtained. A titanium oxide layer that serves as an electron transport layer and is positioned on a member that serves as an optically transparent electrode layer has a thickness of 1.0 nm to 60.0 nm, inclusive, and satisfies condition 1 or condition 2. Condition 1: The titanium oxide layer contains an indium metal and an indium oxide, wherein, if the content of elemental titanium is denoted as Ti, the content of the indium metal is denoted as InM, and the content of the indium oxide is denoted as InOx, the atomic ratio (InM/Ti) is 0.10 to 0.25, inclusive, and the atomic ratio (InOx/Ti) is 0.50 to 10.00, inclusive. Condition 2: The titanium oxide layer contains a tin metal and a tin oxide, wherein, if the content of the elemental titanium is denoted as Ti, the content of the tin metal is denoted as SnM, and the content of the tin oxide is denoted as SnOx, the atomic ratio (SnM/Ti) is 0.05 to 0.30, inclusive, and the atomic ratio (SnOx/Ti) is 0.50 to 10.00, inclusive.

According to one embodiment, a flexible substrate includes an insulating basement including an island-like portion and a plurality of belt portions, an organic insulating layer, and an electrical element and a projecting portion provided on the organic insulating layer and overlapping the island-like portion. The electrical element includes a common electrode, a first electrode located between the organic insulating layer and the common electrode, and an active layer located between the common electrode and the first electrode. The projecting portion is located on the first electrode and projects in a direction towards the common electrode from the first electrode.

A transparent electronic device includes an organic film, an amorphous transparent oxycarbide layer, and a matrix layer. The organic film includes a polymer containing carboxyl groups (—COOH). The amorphous transparent oxycarbide layer is disposed on the organic film and consists of a metal element, carbon element, oxygen element and an additional element. The metal element is selected from molybdenum (Mo), indium (In), tin (Sn), zinc (Zn), cadmium (Cd) and a combination thereof. An atomic number percentage of the additional element is equal to or greater than 0%, and is less than the least of an atomic number percentage of the metal element, an atomic number percentage of the oxygen element and an atomic number percentage of the carbon element. The matrix layer is disposed on the amorphous transparent oxycarbide layer. A manufacturing method of a transparent electronic device is also provided.