A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

An organic photodetector includes an activation layer including a p-type semiconductor compound and an n-type semiconductor compound, an optical auxiliary layer including a first optical auxiliary layer including a first amine compound and a second optical auxiliary layer including a second amine compound, a highest occupied molecular orbital (HOMO) energy absolute value of the first amine compound is smaller than a HOMO energy absolute value of the second amine compound, and the first optical auxiliary layer faces the first electrode.

An organic photodetector includes an activation layer including a p-type semiconductor compound and an n-type semiconductor compound, an optical auxiliary layer including a first optical auxiliary layer including a first amine compound and a second optical auxiliary layer including a second amine compound, a highest occupied molecular orbital (HOMO) energy absolute value of the first amine compound is smaller than a HOMO energy absolute value of the second amine compound, and the first optical auxiliary layer faces the first electrode.

The present invention relates to a perovskite solar cell and a tandem solar cell comprising the same, characterized in that the perovskite solar cell comprises: a substrate; a transparent electrode; a hole transport layer; a perovskite light absorption layer, an electron transport layer; and a metal electrode, wherein the electron transport layer is a graded thin film in which a chemical binding state of elements constituting the electron transport layer gradually changes from the lower portion thereof toward the upper portion thereof.

The present invention relates to a perovskite solar cell and a tandem solar cell comprising the same, characterized in that the perovskite solar cell comprises: a substrate; a transparent electrode; a hole transport layer; a perovskite light absorption layer, an electron transport layer; and a metal electrode, wherein the electron transport layer is a graded thin film in which a chemical binding state of elements constituting the electron transport layer gradually changes from the lower portion thereof toward the upper portion thereof.

The present invention relates to a perovskite solar cell and a method for manufacturing the same, and relates to a perovskite solar cell and a method for manufacturing the same, the perovskite solar cell comprising an electron transporting layer formed of specific components, and a passivation layer introduced between the electron transporting layer and a source electrode.

A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

The present disclosure provides a laser-sintered perovskite solar cell and a manufacturing method thereof. The method includes: forming a hole blocking layer on a conductive base substrate; forming a mesoporous nanocrystalline layer on the hole blocking layer, and sintering the mesoporous nanocrystalline layer through a laser beam; forming an insulation interlayer on the mesoporous nanocrystalline layer; forming a counter electrode layer on the insulation interlayer, and sintering the insulation layer and the counter electrode layer; and applying a perovskite precursor solution on the counter electrode layer to obtain the laser-sintered perovskite solar cell.

A solar cell according to some embodiments of the present disclosure includes a first photoelectric conversion portion, a second photoelectric conversion portion, a side insulating layer, a first electrode, and a second electrode. The first photoelectric conversion portion includes a photoelectric conversion layer including a perovskite compound, a first transport layer on one side of the photoelectric conversion layer, and a second transport layer on the other side of the photoelectric conversion layer, the second photoelectric conversion portion is arranged below the second transport layer of the first photoelectric conversion portion and has a different material or structure from the first photoelectric conversion portion, the side insulating layer is formed on at least one side surface of the first photoelectric conversion portion, the first electrode is electrically connected to the first photoelectric conversion portion on one surface of the first photoelectric conversion portion serving as a light-receiving surface, and the second electrode is electrically connected to the second photoelectric conversion portion below the second photoelectric conversion portion. Therefore, a solar cell module that includes a photoelectric conversion portion including a perovskite compound, is further provided with a tandem structure provided with another photoelectric conversion portion having a different material or structure, and has excellent efficiency and reliability can be provided. In addition, a short-circuit current can be drastically reduced to ? of an existing level while an active region of the solar cell with a tandem structure is ensured to a maximum extent.

A direct plasmonic photovoltaic cell (1) and a method of manufacturing such a photovoltaic cell is proposed. The photovoltaic cell (1) comprises: a first conductive substrate (2): a layer of a p-type semiconductor as a Hole Transporting Layer HTL (3): a layer of metal plasmonic nanoparticles (41. 42): a layer of an n-type semiconductor as an Electron Transporting Layer ETL (5); and a second conductive substrate (6). The HTL (3) is in direct physical contact with the first conductive substrate (2) and the second conductive substrate (6) is in direct physical contact with the ETL (5).