The present invention relates to the technical field of solar cells, and particularly relates to a perovskite/silicon heterojunction tandem solar cell and a preparation method thereof. The solar cell includes a silicon-based sub-cell and a perovskite sub-cell laminated on the silicon-based sub-cell, where intermediate layers or recombination junctions formed by a p-type heavily-doped amorphous silicon layer and an n-type heavily-doped amorphous silicon layer are arranged between the silicon-based sub-cell and the perovskite sub-cell. According to the present invention, through the use of the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer as a carrier recombination junction, on the one hand, the preparation and equipment costs are greatly reduced, and on the other hand, the photocurrent density and conversion efficiency of the tandem cell can be improved.

A photoelectric conversion element of the present disclosure includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer includes a photoelectric conversion material and a phosphate ester. A method for manufacturing the photoelectric conversion element of the present disclosure includes: applying a precursor solution to a base to form a coating film, the precursor solution containing a raw material of the photoelectric conversion material, the phosphate ester, and a solvent containing dimethyl sulfoxide; and baking the coating film to form a photoelectric conversion layer.

A photoelectric conversion element of the present disclosure includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer includes a photoelectric conversion material and a phosphate ester. A method for manufacturing the photoelectric conversion element of the present disclosure includes: applying a precursor solution to a base to form a coating film, the precursor solution containing a raw material of the photoelectric conversion material, the phosphate ester, and a solvent containing dimethyl sulfoxide; and baking the coating film to form a photoelectric conversion layer.

A chemical compound of the general formula I:

##STR00001##

In some aspects, groups B are each independently selected from

##STR00002##

where * represents the attachment to group A. In some aspects,

##STR00003##

is a heterocyclic ring having at least one nitrogen atom. In some aspects, R.sub.1-R.sub.(8-n) are each independently selected from the group consisting of: H, halogen, alkyl, alkenyl, alkynyl, alkoxy, thioalkoxy, aryl, and heteroaryl. In some aspects, R.sub.1-R.sub.(8-n) form at least one further fused ring on group A. In some aspects, n is a natural number greater than or equal to 1.

A solid-state imaging device includes a photoelectric conversion element. The photoelectric conversion element includes a first electrode, an electron transport layer, and a photoelectric conversion layer. The first electrode is disposed on a substrate and the photoelectric conversion layer is disposed on the first electrode. The electron transport layer is disposed between the first electrode and the photoelectric conversion layer and includes a buffer layer and a particulate layer. The buffer layer has an ionization potential larger than a work function of the first electrode and an electron affinity larger than the photoelectric conversion layer. Then, the particulate layer includes particulates that contain conductive zinc oxide as a main component.

A solid-state imaging device includes a photoelectric conversion element. The photoelectric conversion element includes a first electrode, an electron transport layer, and a photoelectric conversion layer. The first electrode is disposed on a substrate and the photoelectric conversion layer is disposed on the first electrode. The electron transport layer is disposed between the first electrode and the photoelectric conversion layer and includes a buffer layer and a particulate layer. The buffer layer has an ionization potential larger than a work function of the first electrode and an electron affinity larger than the photoelectric conversion layer. Then, the particulate layer includes particulates that contain conductive zinc oxide as a main component.

The present disclosure relates to an electron transport layer for a perovskite solar cell, which is tin oxide (SnO.sub.2-x, 0<x<1) comprising oxygen vacancies, wherein the oxygen vacancies are passivated by oxidized black phosphorus quantum dots (O-BPs), and a perovskite solar cell including the same. The electron transport layer for a perovskite solar cell of the present disclosure can prevent phase transition to a structure having semiconductor properties not suitable for solar cells, such as ?-FAPbI.sub.3 or PbI.sub.2, due to the occurrence of iodine interstitials (I.sub.i) in the perovskite structure caused by deficiency of oxygen atoms in SnO.sub.2-x at the interface, by passivating the oxygen vacancies with oxidized black phosphorus quantum dots (O-BPs) containing multiple P?O bonds.

The present disclosure relates to an electron transport layer for a perovskite solar cell, which is tin oxide (SnO.sub.2-x, 0<x<1) comprising oxygen vacancies, wherein the oxygen vacancies are passivated by oxidized black phosphorus quantum dots (O-BPs), and a perovskite solar cell including the same. The electron transport layer for a perovskite solar cell of the present disclosure can prevent phase transition to a structure having semiconductor properties not suitable for solar cells, such as ?-FAPbI.sub.3 or PbI.sub.2, due to the occurrence of iodine interstitials (I.sub.i) in the perovskite structure caused by deficiency of oxygen atoms in SnO.sub.2-x at the interface, by passivating the oxygen vacancies with oxidized black phosphorus quantum dots (O-BPs) containing multiple P?O bonds.

According to an object to offer a film in quality with an industrial advantage, a method of forming a film is suggested. An embodiment of a method of the present invention includes turning a raw-material solution containing an aprotic solvent (that may be lactones or lactams) into a mist or droplets (step of atomization), carrying the mist or droplets into a film-formation chamber onto a base that is arranged in the film-formation chamber (step of carrying the mist), and causing a reaction of the mist or droplets preferably at a temperature that is 250? C. or less to form a film on the base (step of forming a film).

The complex comprising one or more of the compound represented by general formula: RPb.sub.n1X.sub.m1 (wherein R is a cation represented by R.sup.1NH.sub.3.sup.+ (wherein R.sup.1 represents a univalent substituted or unsubstituted hydrocarbon group), or the following formula:

##STR00001##

(wherein R.sup.2 represents a hydrogen atom, or a univalent substituted or unsubstituted hydrocarbon group); X is the same or different, and each represents a halogen atom; n1 is 0.8 to 1.2; and m1 is 2.8 to 3.2, or the compound represented by general formula: R.sub.2Pb.sub.n2X.sub.m2 wherein R and X are as defined above; n2 is 2.8 to 3.2; and m2 is 7.7 to 8.3; and one or more dimethylformamide molecules is capable of decreasing the stirring time upon dissolution in an organic solvent such as DMSO, as well as decreasing the hysteresis and improving the solar cell characteristics (in particular, photoelectric conversion efficiency) when the complex is applied to a perovskite layer.