The present invention provides a photoelectric conversion element having excellent heat resistance. In addition, the present invention provides an optical sensor and an imaging element including the photoelectric conversion element. In addition, the present invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element according to the embodiment of the present invention including a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) or (2).

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According to some embodiments, an electrical generating window comprises a first substrate layer, an anode layer disposed adjacent to the first substrate layer, a hole transport layer disposed adjacent to the anode layer, an active layer disposed adjacent to the hole transport layer, an electron transport layer disposed adjacent to the active layer, a cathode layer disposed adjacent to the electron transport layer, and a second substrate layer adjacent to the cathode layer. Two or more electron conveyance cylinders are disposed between the second substrate layer and the active layer.

According to some embodiments, an electrical generating window comprises a first substrate layer, an anode layer disposed adjacent to the first substrate layer, a hole transport layer disposed adjacent to the anode layer, an active layer disposed adjacent to the hole transport layer, an electron transport layer disposed adjacent to the active layer, a cathode layer disposed adjacent to the electron transport layer, and a second substrate layer adjacent to the cathode layer. Two or more electron conveyance cylinders are disposed between the second substrate layer and the active layer.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1?10.sup.?7 S/cm.

The present disclosure relates to the field of photovoltaic technologies. Disclosed are a solar cell and a photovoltaic module. The solar cell includes: an absorption layer; and an energy selective contact layer located on a surface of the absorption layer, the energy selective contact layer having selectivity for electron energy or hole energy, and the material of the energy selective contact layer including a low-dimensional perovskite material. According to the solar cell and the photovoltaic module provided by the present disclosure, a photovoltaic module can be manufactured.

Provided are a solar cell and a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a bottom cell, a perovskite top cell, an inter layer between the bottom cell and the perovskite top cell, and a back electrode located on a back surface of the bottom cell. The perovskite top cell includes a hole transport layer, a perovskite layer, an electron transport layer, and a conductive structure stacked sequentially. The conductive structure includes at least one stack each including a first conductive layer and a second conductive layer located between the first conductive layer and the electron transport layer. The first conductive layer includes a first transparent conductive film. The second conductive layer includes a metal conductive film in a metallization region and a second transparent conductive film in a non-metallization region.

An imaging element according to an embodiment of the present disclosure includes a photoelectric conversion layer including an organic photoelectric conversion material, a hole transporting material, and an electron transporting material, in which the electron transporting material includes a fullerene compound monomer and a fullerene compound dimer.

An imaging element according to an embodiment of the present disclosure includes a photoelectric conversion layer including an organic photoelectric conversion material, a hole transporting material, and an electron transporting material, in which the electron transporting material includes a fullerene compound monomer and a fullerene compound dimer.

Solar cell stack-ups are described in which fullerene based transport layers are blended with a metal halide such as LiF, CsF or MgF.sub.2. In particular, perovskite solar cell stack-ups are described in which an electron transport layer includes a metal halide and fullerene blend.

Solar cell stack-ups are described in which fullerene based transport layers are blended with a metal halide such as LiF, CsF or MgF.sub.2. In particular, perovskite solar cell stack-ups are described in which an electron transport layer includes a metal halide and fullerene blend.