Provided is a semiconductor element that can generate power with high efficiency and has high durability. A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a second photoactive layer including silicon; a second doped layer; a passivation layer; and a second electrode in this order. The interlayer interface existing between the first photoactive layer and the adjacent layer is a substantially smooth surface, and the multilayer junction photoelectric conversion element further includes a light scattering layer that penetrate a part of the passivation layer and electrically join the second doped layer and the second electrode. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided.

A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.

A perovskite solar battery includes first and second electrodes, a light absorbing layer between the first and second electrodes, and first and second hole transport layers. The first hole transport layer is located between the second hole transport layer and the light absorbing layer. The second hole transport layer is located between the first electrode and the light absorbing layer or between the second electrode and the light absorbing layer. A first hole transport material of the first hole transport layer is one selected from PTAA, undoped nickel oxide, and nickel oxide doped with a doping element. A second hole transport material of the second hole transport layer includes at least one of a P-type transition metal oxide semiconductor material or a P-type transition metal halide semiconductor material that is capable of isolating water and oxygen.

The present disclosure provides a perovskite solar cell comprising at least an electrode, an electron transport layer, a hole transport layer, a perovskite layer and a passivation layer. In the perovskite solar cell, the passivation layer may contain a passivator, the passivatormay comprise an aza fused bicyclic compound and/or an organic salt formed from the aza fused bicyclic compound and an acid, each fused ring in the aza fused bicyclic compound may be independently a five-membered or six-membered saturated ring, unsaturated ring or aromatic ring, the fused ring of the aza fused bicyclic compound may contain 1-5 nitrogen atoms, and the fused ring may be an unsubstituted ring or a ring substituted with one or two substituents having 1-3 carbon atoms.

The present disclosure provides a perovskite solar cell comprising at least an electrode, an electron transport layer, a hole transport layer, a perovskite layer and a passivation layer. In the perovskite solar cell, the passivation layer may contain a passivator, the passivatormay comprise an aza fused bicyclic compound and/or an organic salt formed from the aza fused bicyclic compound and an acid, each fused ring in the aza fused bicyclic compound may be independently a five-membered or six-membered saturated ring, unsaturated ring or aromatic ring, the fused ring of the aza fused bicyclic compound may contain 1-5 nitrogen atoms, and the fused ring may be an unsubstituted ring or a ring substituted with one or two substituents having 1-3 carbon atoms.

A photoelectric conversion element includes: a first electrode; a photoelectric conversion layer; and a second electrode. The photoelectric conversion element includes a scaling part disposed so as to cover at least side surfaces of the photoelectric conversion layer and the second electrode. The sealing part includes a pressure-sensitive adhesive.

A tandem cell and a manufacturing method thereof are provided in the present disclosure, so as to improve hole transmission performance of the tandem cell. The tandem cell includes a bottom cell, a hole transporting layer formed on the bottom cell, a perovskite absorbing layer formed on the hole transporting layer, and a transparent conducting layer formed above the perovskite absorbing layer. A material of the hole transporting layer includes a semiconductor material with a p-type delafossite structure, and a valence band top energy level of the hole transporting layer sequentially decreases in a direction away from the bottom cell, which has dual functions of carrier transport and carrier recombination, so as to simplify a cell structure and optimize the photoelectric conversion efficiency. The tandem cell and the manufacturing method thereof according to the present disclosure are used for manufacturing the tandem cell.

A tandem cell and a manufacturing method thereof are provided in the present disclosure, so as to improve hole transmission performance of the tandem cell. The tandem cell includes a bottom cell, a hole transporting layer formed on the bottom cell, a perovskite absorbing layer formed on the hole transporting layer, and a transparent conducting layer formed above the perovskite absorbing layer. A material of the hole transporting layer includes a semiconductor material with a p-type delafossite structure, and a valence band top energy level of the hole transporting layer sequentially decreases in a direction away from the bottom cell, which has dual functions of carrier transport and carrier recombination, so as to simplify a cell structure and optimize the photoelectric conversion efficiency. The tandem cell and the manufacturing method thereof according to the present disclosure are used for manufacturing the tandem cell.

The present invention relates to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby and, more specifically, to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby, wherein the method comprises the steps of: (S1) applying a) an oxidative agent, b) ultraviolet light and ozone, c) oxygen plasma, or d) nitrogen dioxide gas to a hole transport layer (HTL) of a laminate in which a substrate layer, a first electrode layer, and the hole transport layer (HTL) containing a metal oxide are sequentially laminated, to oxidize the metal oxide; and (S2) sequentially laminating a perovskite layer, an electron transport layer, and a second electrode layer on the hole transport layer of the laminate.

An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.

NCH.sub.2XCH.sub.2N  (1)